Enhanced Sequential Carrier Capture into Individual Quantum Dots and Quantum Posts Controlled by Surface Acoustic Waves

Völk, Stefan; Schülein, Florian J. R.; Knall, Florian; Reuter, D.; Wieck, A. D.; Truong, Thanh-Dat; Kim, Hyochul; Petroff, P. M.; Wixforth, Achim; Krenner, Hubert J.

doi:10.1021/nl1013053

Cited by 51 publications

(70 citation statements)

References 44 publications

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“…Thus, further improvements could be achieved by advanced QD architectures providing high mobility transport channels. In addition to hybrid coupled QD-QW structures 29 , these include self-assembled quantum posts 30 for which single photon emission 31 , enhanced acousto-electric transport 8 and remote SAW-driven carrier injection 10 has been recently demonstrated. For short wavelength operation, "inverted" GaAs/AlGaAs QDs with tunable WL thickness 32 could be the system of choice.…”

Section: Discussionmentioning

confidence: 99%

Acoustically regulated carrier injection into a single optically active quantum dot

et al. 2013

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We study the carrier injection into a single InGaAs/GaAs quantum dot regulated by a radio frequency surface acoustic wave. We find that the time of laser excitation during the acoustic cycle programs both the emission intensities and time of formation of neutral (X 0 ) and negatively charged (X − ) excitons. We identify underlying, characteristic formation pathways of both few-particle states in the time-domain experiments and show that both exciton species can be formed either with the optical pump or at later times by injection of single electrons and holes "surfing" the acoustic wave. All experimental observations are in excellent agreement with calculated electron and hole trajectories in the plane of the two-dimensional wetting layer which is dynamically modulated by the acoustically induced piezoelectric potentials. Taken together, our findings provide insight on both the onset of acousto-electric transport of electrons and holes and their conversion into the optical domain after regulated injection into a single quantum dot emitter. arXiv:1306.5954v1 [cond-mat.mes-hall]

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Section: Discussionmentioning

confidence: 99%

Acoustically regulated carrier injection into a single optically active quantum dot

et al. 2013

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“…Moreover, SAWs have a long-standing tradition to control optically active semiconductors [23]. On one hand, acoustic charge transport [24] in piezoelectric semiconductors by these phononic modes have been proposed [25] and demonstrated [26][27][28] to regulate the carrier injection into QDs for precisely triggered single photon sources. On the other hand, the dynamic strain accompanying the SAW dynamically tunes optical modes in optical cavities [18,29] or excitons in QDs [30,31].…”

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Surface acoustic wave regulated single photon emission from a coupled quantum dot–nanocavity system

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et al. 2016

Applied Physics Letters

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A coupled quantum dot-nanocavity system in the weak coupling regime of cavityquantumelectrodynamics is dynamically tuned in and out of resonance by the coherent elastic field of a fSAW 800 MHz surface acoustic wave. When the system is brought to resonance by the sound wave, light-matter interaction is strongly increased by the Purcell effect. This leads to a precisely timed single photon emission as confirmed by the second order photon correlation function, g (2) . All relevant frequencies of our experiment are faithfully identified in the Fourier transform of g (2) , demonstrating high fidelity regulation of the stream of single photons emitted by the system. Solid state cavity-quantumelectrodynamics (cQED) systems formed by an exciton confined in a single semiconductor quantum dot (QD) and strongly localized optical modes in a photonic nanocavity (PhNCs) have been intensely studied over the past years [1,2]. Membranes patterned with two-dimensional photonic crystals represent a particularly attractive platform for the integration of large scale photonic networks on a chip [3]. In this architecture, both the weak[4] and strong coupling regime [5,6] of cQED have been demonstrated. These key achievements paved the way towards efficient sources of single photons [7,8] or optical switching operations controlled by single photons [9]. So far, the dynamic control of the spontaneous emission [10] or the coherent evolution of the coupled QD-PhNC cQED system [11,12] has relied mainly on all-optical approaches, although all-electrical approaches would be highly desirable for real-world applications due to their reduced level of complexity. However, to switch an electric field and induce a Stark effect [13] with sufficent bandwidth, nanoscale electric contacts are required [14]. In addition to light, these membrane structures guide [15] or confine vibronic excitations with strong optomechanical coupling strength [16,17]. These phononic modes can be directly employed to interface photonic crystal membranes by radio frequency surface acoustic waves (SAWs) [18,19]. As SAWs can be excited at GHz frequencies on piezoelectric materials [20,21], electrically induced and acoustically driven quantum gates are well within reach on this platform [22]. Moreover, SAWs have a long-standing tradition to control optically active semiconductors [23]. On one hand, acoustic charge transport [24] in piezoelectric semiconductors by these phononic modes have been proposed [25] and demonstrated [26][27][28] to regulate the carrier injection into QDs for precisely triggered single photon sources. On the other hand, the dynamic strain accompanying the SAW dynamically tunes optical modes in optical cavities [18,29] or excitons in QDs [30,31]. Here we demonstrate the dynamic, acousto-optic control of a prototypical QD-PhNC system by a f SAW 800 MHz SAW. We show that the acoustic field precisely modulates the energy detuning between the QD and PhNC on sub-nanosecond timescales switching the emission rate of the QD by a factor of 4. The photon statis...

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“…The use of SAWs is an expanding research field, which has been widely applied to semiconductor quantum wells (QWs), 1-3 wires [4][5][6] and dots (QDs). [7][8][9][10][11] By controlling the excitonic emission in III-V semiconductor QDs by SAWs, high repetition rate single photon sources (SPSs) [7][8][9] and periodic laser mode feeding 12 have been reported. Also, dynamic control of individual QDs 11 and on-demand single-electron transfer between distant QDs 13 have been demonstrated.…”

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Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

et al. 2015

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The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.Surface acoustic waves induce periodic strain and piezoelectric fields near a semiconductor surface which can dynamically modify their basic properties. The use of SAWs is an expanding research field, which has been widely applied to semiconductor quantum wells (QWs) 1-3 , wires 4-6 and dots (QDs) [7][8][9][10][11] .By controlling the excitonic emission in III-V semiconductor QDs by SAWs, high repetition rate single photon sources (SPSs) 7-9 and periodic laser mode feeding 12 have been reported. Also, dynamic control of individual QDs 11 and on-demand single-electron transfer between distant quantum dots 13 have been demonstrated. In a more general context, a proposal for onchip quantum transducers based on SAWs enabling long-range coupling of many qubits has been recently put forward 14 . In addition to the band-edge modulation, which determines the QD emission wavelength, the tunable strain field of the SAW can be used to modify other properties related to the band structure, as the exciton binding energy, in a similar way as static strain field 15 . While most of the SAW-related work reported in semiconductor structures refers to III-V systems, studies on group III-Nitrides are scarce. Extension of these techniques to group III-Nitride systems is important, as their large gap enables highpower/high-temperature applications and high repetition rate SPSs covering a broad spectral range. Also, the high sound velocities and the stronger electromechanical coupling coefficients of nitrides, as compared to (Al,Ga

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Enhanced Sequential Carrier Capture into Individual Quantum Dots and Quantum Posts Controlled by Surface Acoustic Waves

Cited by 51 publications

References 44 publications

Acoustically regulated carrier injection into a single optically active quantum dot

Acoustically regulated carrier injection into a single optically active quantum dot

Surface acoustic wave regulated single photon emission from a coupled quantum dot–nanocavity system

Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

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