nication platforms [10,11] and quantum key distributions [10] has dramatically enhanced the quest for modulator technologies capable to enable data communications by means of all-optical devices and circuits, [12] across the visible and infrared (IR) ranges. Such a demand is actually extending also to the far-IR or terahertz (THz) frequency range of the electromagnetic spectrum (0.1-10 THz, 3000 -30 µm), an emerging frontier research field in quantum science.In this technologically appealing frequency domain, high-resolution spectroscopic systems for molecular sensing and metrology applications [13,14] might also highly benefit from the development of efficient, tunable modulators capable of amplitude, [1,2] frequency, [6] and phase stabilization [4,5] of miniaturized metrological sources, as the recently emerged quantum cascade laser (QCL) frequency combs (FCs). [15,16] QCLs can indeed support very high modulation rates (up to tens of GHz), [17,18] through direct modulation of their operating current, [19] although at the price of current instabilities, [20,21] or spurious amplitude and frequency self-modulation, [20,21] detrimental for quantum applications requiring a tight control of the optical phase and frequency jitter. Electro-optical modulators, possibly integrated on-chip, are therefore highly desirable in this context.In the last decade, different approaches, based on III-V semiconductors as silicon and gallium arsenide, or employing two-dimensional (2D) electron gas in AlGaAs/InGaAs heterostructures, have been adopted to devise THz-frequency modulators, with modulation speeds up to 14 GHz. [22] However, the high demand for fast (GHz modulation) and efficient (50% modulation efficiency) amplitude, frequency, and polarization modulators operating at room-temperature, is recently driving extensive research on 2D materials that can provide the required versatility and electrical/optical tunability needed for large-scale applications.Graphene, the most widely tested 2D material, display a large potential for the development of optoelectronic devices and components capable to actively manipulate IR light. [1,23] The optical conductivity of single layer graphene (SLG) [24,25] results from interband and intraband transitions between, or within, Layered 2D materials display unique optical and electrical properties that can enable manipulation, propagation, and detection of electromagnetic waves over a broad spectral range, with a high level of control, offering the potential to activate different functionalities, by optical or electrical means, in a single chip. Here, a compact optoelectronic device behaving as an amplitude modulator, saturable absorber mirror (SA mirror), and frequency-tuner is conceived at terahertz (THz) frequencies. It comprises a gate-tunable single layer graphene (SLG), embedded in a quarter-wave cavity, operating in the 1-5 THz range. The use of electrolyte ionic liquid gate ensures 40% optical amplitude modulation depth. Z-scan self-mixing interferometry reveals 60% reflectivity modulat...