This paper presents the design, implementation, and characterization of a fully integrated accelerometer using a bondwire inertial sensor. The accelerometer was implemented in a standard CMOS process without microelectromechanical processing. The system consists of a gold and aluminum bondwire inertial sensor and readout circuitry. Finite-element analysis was used to characterize the mechanical performance of the accelerometer and reinforce empirical data. The system includes a fully differential frequency modulation downconversion architecture and consumes 13.5 mW while achieving a gain of 10 kHz/g, a bandwidth of 700 Hz, and a resolution of 80 mg. The chip was fabricated in an 0.13-m CMOS process with an area of 1.1 mm 2 .
An architecture for generating a voltage reference at a fraction of the silicon bandgap is proposed. It uses a twophase switched-capacitor network to add multiples and fractions of VBE and ∆VBE to achieve a near zero temperature coefficient without the use of resistors or op-amps. The 0.0055mm 2 circuit, implemented entirely on-chip in 65nm CMOS, produces a voltage of 423mV, has a measured σ of 2.2%, and consumes 138nA while operating at a supply as low as 750mV at -35 • C.
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