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Tri-doped porous carbon derived from waste-biomass was developed for a highly efficient counter electrode in dye-sensitized solar cell with an efficiency of 7.83%.

Chemical components are one of the most significant traits and attributes of plant tissues, and lead to their different functions. In this study, the composition of Amomun tsao-ko essential oils (AEOs) from different regions was first determined by a combination of gas chromatography–mass spectrometry (GC-MS) and gas chromatography–ion mobility spectrometry (GC-IMS). In total, 141 compounds were identified, of which terpenes and aldehydes were the main groups. Orthogonal partial least square discriminant analysis (OPLS-DA) distinguished the samples from different regions clearly, and the main differences were terpenes, aldehydes, and esters. Meanwhile, AEOs showed strong antibacterial activity against Staphylococcus aureus (S. aureus), and the minimum inhibitory concentration (MIC) and minimum bactericidal concentration (MBC) reached 0.20 mg/mL and 0.39–0.78 mg/mL, respectively. From correlation analysis, 1,8-cineole, (E)-dec-2-enal, citral, α-pinene, and α-terpineol were determined to be the potential antibacterial compounds. This study provides the basis for the variety optimization ofA. tsao-ko and its application as a natural food preservative.

CoSe2/carbon shell composites with many active sites were developed as catalysts for I3− reduction in dye-sensitized solar cells with efficiency and stability exceeding those of Pt.

We report an enhanced high electrocatalytic hydrogen evolution activity of trace Pt and Co diluted in ternary CuCoPt alloy nanoparticles with Cu as the substrate. Using only 10% Pt atoms can display even better activity and stability in hydrogen evolution reactions than using pure Pt nanoparticles.

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In this work, the properties and chemical mechanical polishing (CMP) characteristics of thin films of a new low dielectric constant (low-) oxide deposited using Flowfill chemical vapor deposition (CVD) technology are presented. This oxide film consists of silicon dioxide network with methyl groups incorporated and has a dielectric constant as low as ϳ2.7. The film properties were studied using Fourier transform infrared spectroscopy (FTIR), spectroscopic ellipsometry, Rutherford backscattering, atomic force microscopy, and capacitance-voltage measurements. The refractive index, as low as 1.38, was measured using spectroscopic ellipsometry. The surface was found to be more hydrophobic compared to conventional CVD oxide. The stretching mode of the Si-O bond peak in the FTIR spectrum shifts to lower wavenumber, which corresponds to lower Si-O bonding energy, with increase in the methyl concentration inside the film. The CMP removal rate decreases as the methyl concentration in the film increases. An atomically smooth surface with root mean square surface roughness <1 nm over an area 2 ϫ 2 m was obtained after CMP. Our results suggest that the incorporation of methyl groups results in a reduction in the CMP removal rate. We speculate that the diffusion of water into the film is probably the CMP removal rate-limiting step.

Articles you may be interested inPlasma enhanced chemical vapor deposition of silicon oxide films with divinyldimethylsilane and tetravinylsilane J. Vac. Sci. Technol. A 24, 291 (2006); 10.1116/1.2171706 Chemical vapor deposition boron carbo-nitride deposited using dimethylamine borane with ammonia and ethylene J.Effects of O 2 and He on the properties of the trimethyl silane based low-k films Characterization of low dielectric constant plasma enhanced chemical vapor deposition fluorinated silicon oxide films as intermetal dielectric materialsIn this article, methyl-doped silicon oxide films deposited using Flowfill™ chemical vapor deposition ͑CVD͒ technology have been chracterized for use in inter-layer dielectrics application. Films with different methyl concentrations were deposited and characterized in order to study the effect of methyl concentration on film properties. Material properties including chemical composition and bonding structure, density, dielectric constant ͑͒, refractive index, thermal stability, resistance to moisture absorption, leakage current, and hardness were investigated. The films have a as low as 2.7 and were found to be thermally stable up to 550°C. They show excellent resistance to moisture absorption. Low-leakage current and breakdown voltage higher than 3 MV/cm were obtained. Their hardness is lower than silicon oxide deposited using plasma-enhanced CVD but is higher than most polymer and nanoporous low-dielectric constant ͑low-͒ materials. The chemical mechanical polishing ͑CMP͒ characteristics of these films and their stability under plasma treatments were also studied. Film's CMP removal rate decreases as the methyl concentration in film increases. An atomically smooth surface with root mean square surface roughness Ͻ1 nm over a 10ϫ10 m area was obtained after CMP. This film remains stable under nitrogen (N 2 ) and hydrogen (H 2 ) plasma but is damaged by oxygen (O 2 ) plasma.