Characterization of methyl-doped silicon oxide film deposited using Flowfill™ chemical vapor deposition technology

Abstract

Articles you may be interested inPlasma enhanced chemical vapor deposition of silicon oxide films with divinyldimethylsilane and tetravinylsilane J. Vac. Sci. Technol. A 24, 291 (2006); 10.1116/1.2171706 Chemical vapor deposition boron carbo-nitride deposited using dimethylamine borane with ammonia and ethylene J.Effects of O 2 and He on the properties of the trimethyl silane based low-k films Characterization of low dielectric constant plasma enhanced chemical vapor deposition fluorinated silicon oxide films as intermetal dielectric materialsIn this article, methyl-doped silicon oxide films deposited using Flowfill™ chemical vapor deposition ͑CVD͒ technology have been chracterized for use in inter-layer dielectrics application. Films with different methyl concentrations were deposited and characterized in order to study the effect of methyl concentration on film properties. Material properties including chemical composition and bonding structure, density, dielectric constant ͑͒, refractive index, thermal stability, resistance to moisture absorption, leakage current, and hardness were investigated. The films have a as low as 2.7 and were found to be thermally stable up to 550°C. They show excellent resistance to moisture absorption. Low-leakage current and breakdown voltage higher than 3 MV/cm were obtained. Their hardness is lower than silicon oxide deposited using plasma-enhanced CVD but is higher than most polymer and nanoporous low-dielectric constant ͑low-͒ materials. The chemical mechanical polishing ͑CMP͒ characteristics of these films and their stability under plasma treatments were also studied. Film's CMP removal rate decreases as the methyl concentration in film increases. An atomically smooth surface with root mean square surface roughness Ͻ1 nm over a 10ϫ10 m area was obtained after CMP. This film remains stable under nitrogen (N 2 ) and hydrogen (H 2 ) plasma but is damaged by oxygen (O 2 ) plasma.

The search for enhanced dielectric strength of polymer‐based dielectrics: A focused review on polymer nanocomposites

“…[ 38,198 ] Inorganic coating techniques were also adopted by other research laboratories, including, but not limited to, Penn State University, RPI, UT Austin, MIT, Tsinghua University, Beijing Institute of Printing, etc. [ 199–204 ] For example, the resulting Si 3 N 4 /P(VDF‐CTFE) bilayer film exhibits significantly reduced conduction loss over a single layer of P(VDF‐CTFE), while maintaining a high energy density. BN coating on polymers like PEI, BOPP, FPE, PI, and c‐BCB resulted in higher dielectric strength for a given charge–discharge efficiency at above 100°C.…”

Beyond surface nanoindentation: Combining static and dynamic nanoindentation to assess intrinsic mechanical properties of chemical vapor deposition amorphous silicon oxide (SiOx) and silicon oxycarbide (SiOxCy) thin films

“…Such a superficial 10 nm-thick layer containing 4 at.% of carbon has been previously observed for 120 nm-thick-TEOS-like samples [12]. Due to higher hydration and to the presence of organic moieties [25][26][27][28], this superficial layer is expected to present lower Young modulus and hardness. Nevertheless, it could be overlooked due to its thinness compared to the values of t (from 63 to nm, as shown in Table 1) and because, as previously mentioned, only the data obtained for h  50 nm are considered.…”

Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone

“…For example, silicon oxide films with a low growth temperature and/or excellent quality have been examined as gate spacers, gap-fill oxides in shallow trench isolation, insulating layers in through-silicon-via, sacrificial layers for the fabrication of three-dimensional (3D) capacitor bottom electrodes, and layers deposited on photoresists to reduce the pattern pitches in nanoscaled semiconductor devices. [1][2][3][4] Besides, low temperature silicon oxide (LTSO) films grown at <300-500 C are essential for display applications due to the bending problem of glass substrates at higher temperatures. In particular, lower growth temperatures are necessary for organic thin film transistors in flexible display applications.…”