The effect of the polishing pad treatments on the chemical-mechanical polishing of SiO2 films

Li, Weidan; Shin, Dong Wook; Tomozawa, M.; Murarka, S. P.

doi:10.1016/0040-6090(96)80082-4

Cited by 88 publications

(54 citation statements)

References 2 publications

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“…Typical conditioning processes involves rubbing a diamond impregnated or other hard surface against the pad. The conditioned pad surface is rougher, presumably reducing contact area and/or increasing fluid transport efficiency on a local scale [21]. It has also been suggested that the pores in some pads directly remove reaction products [22].…”

Section: 3mentioning

confidence: 99%

Material Removal Mechanisms in Lapping and Polishing

et al. 2003

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Section: 3mentioning

confidence: 99%

Material Removal Mechanisms in Lapping and Polishing

et al. 2003

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“…In this paper, a little difference has been made on this model, a thin slurry film is considered to form in this interface that has been demonstrated in section 1.1, and the hydrodynamic pressure is generated to remove the surface material of the wafer. Another important factor to be noticed is that the width of the asperity is quite larger than the asperity height [21] (shown in figure 3). It can be found from the figure that the width of the asperity is often 10-50 times of the asperity height.…”

Section: Discussionmentioning

confidence: 98%

Nano particles’ behavior in non-Newtonian slurry in mechanical process of CMP

et al. 2006

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Thin fluid film is thought to be formed between the wafer surface and the pad asperity. Hydrodynamic pressure on the surface asperity is periodically generated when particles are passing through it. Fatigue fracture occurs under the effect of periodic pressure, and the fatigue begins from the top to the bottom of the asperity. The removal rate is calculated based on the energy-balance fracture theory. Particle size and its relative velocity are important parameters that affect the polishing effect. Using the multiphase model and the power-law viscosity model of the slurry, particle's velocity and its distribution in the slurry are numerically calculated. The results indicate that the slurry film thickness needs to be in the same order of the particle size that the particle can generate effective hydrodynamic pressure to remove the asperity materials.

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“…These last two parameters in themselves do not affect chemical reactions but can have secondary effects. Li et al 14 have studied the mechanics of CMP of SiO 2 and report that temperature affects the pad fibers by decreasing the fiber dynamic shear modulus with increasing temperatures. Decreasing the dynamic shear modulus allows the wafer to sink deeper into the pad and hence contact more silica particles.…”

Section: Discussionmentioning

confidence: 98%