We report the first demonstration of scaled Ge p-channel FinFET devices fabricated on a Si bulk FinFET baseline using the Aspect-Ratio-Trapping (ART) technique [1]. Excellent subthreshold characteristics (long-channel subthreshold swing SS=76mV/dec at 0.5V), good SCE control and high transconductance (1.2 mS/µm at 1V, 1.05 mS/µm at 0.5V) are achieved. The Ge FinFET presented in this work exhibits highest g m /SS at V dd =1V reported for non-planar unstrained Ge pFETs to date.
We report on volume holographic hybrid polarization-angle multiplexing in a gold nanoparticle-doped photopolymer. When doping the gold nanoparticles, the linear photoinduced birefringence of the phenanthrenequinone-doped poly (methyl methacrylate) (PQ/PMMA) photopolymer could be increased by nearly 38%. The data pages could be recorded with the orthogonal circular polarization multiplexing, and the reconstructed images have a symbol-error rate of 3.81% and 4.46% for left circular polarization and right circular polarization state, respectively. Two biological image sets multiplexed both with the angle interval of 0.1° and with orthogonal circular polarization are reconstructed separately and simultaneously.
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