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A Pd/Ge metallization to InGaAsP/InP semiconductors, formed with solid-phase epitaxy (SPE) technique, has been investigated in this study. With this method, ohmic contacts with low specific contact resistance ( p , -2.3 x n.cm2) have been achieved on p-type Ino,,3G@,4,As (p -1.8 X 1019/cm3). The same contact scheme also gives low specific contact resistance ( p , = 6 X lo-' Q.cm2) on n-type Ino.53Gao.47As (n = 1.0 X 1019/cm3). Excellent surface morphology is observed in all the samples, and the contacts do not deteriorate for at least 4 h at temperatures between 300 and 500°C.

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