Solid-phase epitaxial Pd/Ge ohmic contacts to In_1-xGa_xAs_yP_1-y/InP

Abstract

A Pd/Ge metallization to InGaAsP/InP semiconductors, formed with solid-phase epitaxy (SPE) technique, has been investigated in this study. With this method, ohmic contacts with low specific contact resistance ( p , -2.3 x n.cm2) have been achieved on p-type Ino,,3G@,4,As (p -1.8 X 1019/cm3). The same contact scheme also gives low specific contact resistance ( p , = 6 X lo-' Q.cm2) on n-type Ino.53Gao.47As (n = 1.0 X 1019/cm3). Excellent surface morphology is observed in all the samples, and the contacts do not deteriorate for at least 4 h at temperatures between 300 and 500°C.

Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As

“…3,4 An ohmic contact system based on PdGe was developed with comparable q c as AuGeNi-based contacts. [5][6][7][8] In addition, a self-aligned contact metallization process using NiGeSi was developed for GaAs nMOSFETs, 9,10 in which selective epitaxy of GeSi was performed in the S/D regions followed by the formation of NiGeSi contacts using a technique analogous to salicidation in CMOS technology. Recently, a self-aligned Ni-InGaAs contact metallization process was demonstrated on InGaAs nMOSFET.…”

Ge/Pd and Si/Pd/Ge/Pd Non-Alloyed Ohmic Contacts to InP Examined by Backside Secondary Ion Mass Spectrometry

“…Complete experimental details appear in references [3] and [6]. Specific contact resistivities in the low 10- similar Ge/Pd InP contact examined by Chen, et al [7] displayed a contact resistivity of 10-5n-_ cm 2 .…”

Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties

“…9 Though primarily developed for contacting n-type GaAs, Pd/Ge contacts conforming to the solidphase regrowth principle have been shown to yield low (≥1 × 10 -6 Ωcm 2 ) contact resistivities also on p-type In 0.53 Ga 0.47 As (p > 1 × 10 19 cm -3 ). 10,11 This indicates negligible electrical activity of Ge indiffused during contact formation and encouraged the addition of a suitable dopant to this metallization to achieve low resistivities also on moderately (p ≈ 5 × 10 18 cm -3 ) doped material. Indeed, a resistivity decrease by an order of magnitude has been reported for Pd/Ge contacts on In 0.53 Ga 0.47 As (p = 4-7 × 10 18 cm -3 ) if Zn or Cd were implanted into the metal layers.…”