Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As

Abstract

Articles you may be interested inVery low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n+-In0.53 Ga0.47AsA combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures

Measurement of the Schottky barrier height between Ni-InGaAs alloy and In0.53Ga0.47As

“…The SBH obtained for the Ni-InGaAs Schottky diodes is substantially higher than the values that were previously reported. 2,3 However, due to the perfect Richardson plot, we believe that our result is highly reliable although the HRTEM and x-ray data confirm that the Ni-InGaAs alloy is of the same phase as reported in Ref. 3.…”

“…Recently, "silicide-like" Ni-InGaAs alloyed contacts to the InGaAs channel were introduced as a selfaligned metallization method and an alternative to ion implantation of the drain and source. [1][2][3] The series resistance obtained by this technology critically depends on the barrier height between the Ni-InGaAs alloy and InGaAs. Ivana et al 2 evaluated the Schottky barrier height (SBH) between Ni-InGaAs and p-type InGaAs by photoelectron spectroscopy and obtained a value of 0.8 6 0.1 eV at room temperature.…”

Epitaxial NiInGaAs formed by solid state reaction on In0.53Ga0.47As: Structural and chemical study

“…One option for such regions is the silicide-like compound formed by solid state reaction between Ni and InGaAs; this approach holds also the advantage of self-alignment. [4][5][6][7] We have recently investigated this system electrically and showed a near ideal current-voltage behavior with a Schottky barrier height of 0.24 6 0.01 eV. 8 In x Ga 1Àx As based transistors with NiInGaAs S/D regions were investigated and found to function successfully with a very high peak velocity.…”

Low D<inf>it</inf> high-k/In<inf>0.53</inf>Ga<inf>0.47</inf>As gate stack, with CET down to 0.73 nm and thermally stable silicide contact by suppression of interfacial reaction

“…Recently developed salicide-like process on InGaAs using Ni as S/D, faces several challenges. Ni can readily intermix with InGaAs and form Ni-InGaAs alloy structure [7]. The roughness at the interface of Ni-InGaAs/InGaAs increases for higher than 200~ 250 o C annealing temperatures, causing increased reverse leakage current, consequently degrading the off characteristics of the transistor.…”

“…Stable J-V characteristics (n~1.1) and 10 2 higher on/off is achieved for NiSi 2 junction than Ni[7]. Process I 100 kHz split C-V characteristics of Ni-SD InGaAs MOSFET with ALD-La 2 O 3 .…”