AbstractsUltra-thin InGaAs gate stacks with CET= 0.73 nm (EOT< 0.5 nm), D it as low as 8.0×10 11 (cm -2 eV -1 ) and thermal stability up to 600 o C is demonstrated by using La 2 O 3 as gate dielectric. A silicide/InGaAs junction with excellent controllability at the interface is also proposed. These results promise the integration compatibility of this gate stack for future node 3D device structures.
The ohmic properties of Ti/Al/Mo/Au contacts on a high-quality AlGaN/GaN heterostructure epitaxially grown on a GaN substrate were investigated. Systematic structural and electrical analyses of the metal/AlGaN interface after annealing in N2 at 700 and 900 °C were conducted. After annealing at 900 °C, a new Al-rich interlayer with nitrogen vacancies was formed at the metal/AlGaN interface. Ohmic contacts with a low specific contact resistance (ρc) of 5.1 × 10−6 Ω cm2 and a dominant field emission carrier transport mechanism were achieved. The fabrication of recessed-AlGaN-structured ohmic contact with ρc as low as 2.4 × 10−5 Ω cm2 at a low annealing temperature of 650 °C, was also successfully demonstrated. This result indicates that a process methodology can be provided for fabricating low-resistivity ohmic contacts with a low thermal budget on a high-quality AlGaN/GaN structure, which is based on an appropriate control of the metal/AlGaN interface and AlGaN thickness rather than relying on the existence of threading dislocations.
InGaAs surface nitridation effect on La2O3/InGaAs interface has been investigated. It was found that by controlling nitridation conditions such as temperature interface quality can be improved. Also a new covalent structure based on nitridated Si and La2O3 is proposed to reduce dielectric and substrate intermixing, thus improving the high-k/InGaAs interface.
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