Analysis of buried (Al,Ga)As interfaces after molecular-beam epitaxy overgrowthGallium desorption behavior at AlGaAs/GaAs heterointerfaces during high-temperature molecular beam epitaxy
Low-energy ion scattering (LEIS) angular distributions were measured on Ge(001)-1×1-O and Ge(001)-2×1+1×2 surfaces. The intensity of 105° backscattered ions and neutrals from 3 keV Ar+ primary ions incident at 45° were recorded as a function of the surface azimuthal angle. The major symmetry directions of the Ge surface were observed. A 14.2 keV Na+ pulsed beam incident at 72.5° with direct recoiled atoms detected by time of flight (TOF) at an angle of 25°, was used to determine the levels of elemental contaminants on the Ge(001) surface at different stages of annealing. TOF-LEIS of backscattered 3 keV Ne+ was used to monitor, in ‘‘real time,’’ Ge deposition on Si(001) at room temperature.
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