In situ observations of Ge(001) and Ge/Si(001) using low-energy ion scattering

Abstract

Low-energy ion scattering (LEIS) angular distributions were measured on Ge(001)-1×1-O and Ge(001)-2×1+1×2 surfaces. The intensity of 105° backscattered ions and neutrals from 3 keV Ar+ primary ions incident at 45° were recorded as a function of the surface azimuthal angle. The major symmetry directions of the Ge surface were observed. A 14.2 keV Na+ pulsed beam incident at 72.5° with direct recoiled atoms detected by time of flight (TOF) at an angle of 25°, was used to determine the levels of elemental contaminants on the Ge(001) surface at different stages of annealing. TOF-LEIS of backscattered 3 keV Ne+ was used to monitor, in ‘‘real time,’’ Ge deposition on Si(001) at room temperature.

Time of flight mass spectroscopy of recoiled ions studies of surface kinetics and growth peculiarities during gas source molecular beam epitaxy of GaN

“…In ours and other groups earlier reports, this technique was used successfully on Ge, sapphire, GaAs, and Si surface studies. [1][2][3] Contrary to secondary ion mass spectroscopy, TOF-MSRI does not require ultrahigh vacuum for operation, and can work with very little loss of sensitivity in a vacuum as low as 10 Ϫ2 Torr. 4 Also, the scattering geometry is such that both ion source and detector will not interfere with the growth source beams.…”