In situ monitoring of GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopy

Taferner, W.T.; Mahalingam, Krishnamurthy; Dorsey, Donald L.; Eyink, Kurt G.

doi:10.1016/s0022-0248(98)01306-2

Cited by 2 publications

(1 citation statement)

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“…For fabrication of some kinds of devices, such as vertical cavity surface emitting laser diodes (VCSELs), it is necessary to precisely control both thickness and composition of each grown layer. The in-situ reflectance monitor is useful to improve reproducibility and controllability of crystal growth by MBE [1][2][3]. Since the optical properties of the grown layers can be directly measured by the monitor, it greatly helps to grow structures with the designed optical performance.…”

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confidence: 99%

Precise control of growth of DBR by MBE using in‐situ reflectance monitoring system

Mizutani

Teramae

Kobayashi

et al. 2006

Phys. Status Solidi (c)

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An in-situ reflectance monitor was used to improve the reproducibility and controllability of crystal growth by MBE (Molecular Beam Epitaxy). A DBR (Distributed Bragg Reflector) was grown using the in-situ monitor. The controllability of MBE has been remarkably improved and in-situ adjustment of the center wavelength of the stop band of DBR was also accomplished. The center wavelength, however, was found to shift 25 nm with decreasing substrate temperature after growth. This can be reasonably explained by the temperature change of the refractive indices. Therefore, it is necessary to set a target center wavelength at growth temperature, which is shifted form the designed center wavelength considering the temperature change of the refractive indices.

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confidence: 99%