MBE growth of THz quantum cascade lasers

Wasilewski, Z. R.

doi:10.1016/b978-0-12-387839-7.00028-2

Cited by 7 publications

(7 citation statements)

References 119 publications

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“…Flux drift compensation was employed during the growth. 17 High Resolution X-ray Diffraction measurements revealed that layer thicknesses for all three structures were within 0.5% of the target parameters. The active region thickness was kept at 10 lm.…”

Section: Growth and Processingmentioning

confidence: 82%

Experimental investigation of terahertz quantum cascade laser with variable barrier heights

Jiang

Mátyás

Vijayraghavan

et al. 2014

Journal of Applied Physics

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Articles you may be interested inAn indirectly pumped terahertz quantum cascade laser with low injection coupling strength operating above 150KWe report an experimental study of terahertz quantum cascade lasers with variable barrier heights based on the Al x Ga 1-x As/GaAs material system. Two new designs are developed based on semiclassical ensemble Monte Carlo simulations using state-of-the-art Al 0.15 Ga 0.85 As/GaAs three-quantum-well resonant phonon depopulation active region design as a reference. The new designs achieved maximum lasing temperatures of 188 K and 172 K, as compared to the maximum lasing temperature of 191 K for the reference structure. These results demonstrate that terahertz quantum cascade laser designs with variable barrier heights provide a viable alternative to the traditional active region designs with fixed barrier composition. Additional design space offered by using variable barriers may lead to future improvements in the terahertz quantum cascade laser performance. V C 2014 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4873461] 163103-2 Jiang et al.

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Section: Growth and Processingmentioning

confidence: 82%

Experimental investigation of terahertz quantum cascade laser with variable barrier heights

Jiang

Mátyás

Vijayraghavan

et al. 2014

Journal of Applied Physics

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“…The growth rate drift, arising from consumption of group III materials (Ga and Al), is of key importance for the growth of high performance THz QCLs [16]. When both high operating temperature and high output powers are required, the uniformity of the laser stack (or overall periodicity) is a high priority, and this poses stringent demands on the control of the material growth rates over the whole QCL growth period.…”

Section: Layer Thickness Control and Growth Reproducibilitymentioning

confidence: 99%

“…Yet, despite the extensive studies of waveguide and active region designs, there have been relatively few reports discussing the actual growth process itself, although insight is provided by [11][12][13][14][15]. An excellent compressive review [16], following the successful demonstration of THz QCLs with record working temperatures, does address the growth in greater detail. But issues such as the achievement of growth reproducibility in THz QCLs still need to be addressed fully.…”

Section: Introductionmentioning

confidence: 99%

The MBE growth and optimization of high performance terahertz frequency quantum cascade lasers

Li¹,

Zhu²,

Chen³

et al. 2015

Opt. Express

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Abstract:The technique of molecular beam epitaxy has recently been used to demonstrate the growth of terahertz frequency GaAs/AlGaAs quantum cascade lasers (QCL) with Watt-level optical output powers. In this paper, we discuss the critical importance of achieving accurate layer thicknesses and alloy compositions during growth, and demonstrate that precise growth control as well as run-to-run growth reproducibility is possible. We also discuss the importance of minimizing background doping level in maximizing QCL performance. By selecting high-performance active region designs, and optimizing the injection doping level and device fabrication, we demonstrate total optical (twofacet) output powers as high as 1.56 W.

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“…However, much thicker growth brings difficult to precisely control the individual layer thicknesses and the compositions of alloys during a long-time growth by molecular beam epitaxy (MBE). [14,15] Meanwhile, an alternative way is to increase the doping level in each period. However, heavy doping result in more dephasings due to the enhanced scattering, meanwhile, also induce band bending because of the Poisson effect.…”

Section: Introductionmentioning

confidence: 99%

“…However, much thicker growth brings difficult to precisely control the individual layer thicknesses and the compositions of alloys during a long‐time growth by molecular beam epitaxy (MBE). [ 14,15 ]…”

Section: Introductionmentioning

confidence: 99%

Over One Watt Output Power Terahertz Quantum Cascade Lasers by Using High Doping Concentration and Variable Barrier‐Well Height

Lin

Wang

et al. 2022

Physica Rapid Research Ltrs

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A GaAs/AlGaAs‐based terahertz quantum cascade laser with a peak power of 1.31 W and average power of 52 mW is demonstrated. To realize a high output power, an effective way is to increase the electron density at the active region by using a high doping level. This work aims to optimize a design enabling to use a heavy doping level, by realigning the resonant tunneling which can be seriously degraded due to a band bending from this heavy local doping. With variable quantum well and barrier height, the design owns an improved parameter tuning freedoms, and a saturation of peak gain can be achieved at a relatively high doping concentration of 1.0 × 1017 cm−3, which is twice higher than the recently reported device. Nonequilibrium Green's function method including full carriers scattering effect is used to carry out the design optimization, mainly including the realignment of resonant tunneling and suppression of leakages via high‐energy confined levels. In the experiment, a 14 μm thick active layer for this design is grown and also large mesa size is developed. To ensure a quasi‐continuous wave (quasi‐CW) operation, the heat dissipation is also managed.

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MBE growth of THz quantum cascade lasers

Cited by 7 publications

References 119 publications

Experimental investigation of terahertz quantum cascade laser with variable barrier heights

Experimental investigation of terahertz quantum cascade laser with variable barrier heights

The MBE growth and optimization of high performance terahertz frequency quantum cascade lasers

Over One Watt Output Power Terahertz Quantum Cascade Lasers by Using High Doping Concentration and Variable Barrier‐Well Height

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