In situ monitoring of AlGaAs compositions and GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopy

Abstract

Analysis of buried (Al,Ga)As interfaces after molecular-beam epitaxy overgrowthGallium desorption behavior at AlGaAs/GaAs heterointerfaces during high-temperature molecular beam epitaxy

Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100)

“…A lot of studies on the evaporation of Al 1Àx Ga x As [31][32][33][34][35][36][37][38][39][40] have also been done. It was found that during evaporation of Al 1Àx Ga x As, the more volatile III-constituent Ga could evaporate preferentially compared to Al, and so the sample surface could be ended with AlAs.…”