This study investigates the origin of long-puzzled high frequency dispersion on the accumulation region of capacitance-voltage characteristics in an n-type GaAs-based metal-oxide-semiconductor. Probed adatoms with a high Pauling electronegativity, Ag and Au, unexpectedly donate charge to the contacted As/Ga atoms of as-grown α2 GaAs(001)-2 × 4 surfaces. The GaAs surface atoms behave as charge acceptors, and if not properly passivated, they would trap those electrons accumulated at the oxide and semiconductor interface under a positive bias. The exemplified core-level spectra of the Al2O3/n-GaAs(001)-2 × 4 and the Al2O3/n-GaAs(001)-4 × 6 interfaces exhibit remnant of pristine surface As emission, thereby causing high frequency dispersion in the accumulation region. For the p-type GaAs, electrons under a negatively biased condition are expelled from the interface, thereby avoiding becoming trapped.
On October 16, 1998, a mudflow of 2,000 m(3) resulting in five deaths in the Neihu area of Taipei city came in the wake of Typhoon Zebert, which delivered approximately 300 mm/day of precipitation. The destructive 50-m-long mudflow rushed down the hill without any forewarning, wreaking severe destruction to the properties below. Based on in-situ investigation, this paper discusses the event scenario and provides critical data analyses to identify the contributing factors and main triggering mechanism of the disaster. The chances of possible water uplift due to groundwater conditions, the engineering properties of the geomaterials, and the influence of man-made changes in the morphology are examined in weighing the importance of these factors and identifying the main trigger
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