Kinetics of optically generated defects in hydrogenated amorphous silicon

Abstract

The time dependence of optically induced degradation in hydrogenated amorphous silicon (a-Si:H) has been measured at various temperatures.

Persistent photoconductivity in InxAlyGa1−x−yN quaternary alloys

“…͑1͒. The stretched-exponential relaxation has been commonly observed in disordered systems 12 and implies that the origin of the observed PPC effect has the similar property. A leastsquares fit to the experimental data yields a time constant ϳ3ϫ10 4 s, which is much longer than that of the latticemismatch sample used here ͑the obtained decay time constant is about 1ϫ10 3 s for the lattice-mismatch sample͒.…”

Unusual effects of nanowire-nanowire junctions on the persistent photoconductivity in SnO2 nanowire network devices

“…where I 0 is the value of the initial current after removing the UV light, τ the decay time of the photoinduced carriers and β is an exponential factor (0 < β < 1) [31,45]. From the fittings (red curve) the decay time of the single nanowire device (τ = 4.57 × 10 4 s) was about three orders of magnitude greater than that of the nanowire network (τ = 52 s).…”

Study of persistent photoconductivity in semimetallic Al0.2Ga0.8Sb/InAs quantum wells

“…The ''negative'' PPC effect can be clearly observed in , after the illumination is turned off, the recovery of the conductivity to the original dark value does not follow an exponential function. Instead, the decay kinetics of the NPPC or PCC can be described by a stretched exponential-function [15,16],…”

“…The potential barrier E rec obtained from the NPPC effect and PPC effect are about 4.2 meV and 320 meV, respectively. Previously, stretched exponential relaxation has been observed in many materials [15][16][17][18]. It can be used to describe a decay process that does not have a constant decay rate.…”