The continuing miniaturization of microelectronic devices is reaching of their physical limits. Discovery of carbon fullerenes and nanotubes opened a challenging new field in nano-scale devices and materials. Algorithms for the construction of nano-objects, as the initial configurations for the following molecular dynamics simulation, are proposed. Own graphic interface for the spatial visualization of simulated nano-objects is described and some illustrations are presented.
With increasing IC packing density IC manufacturing processes are becoming more and more complex and tolerances of process parameters more critical for production yield and product reliability, and thus the economic viability of the IC manufacturing. At the same time IC structures can no longer be treated as one-dimensional or even two-dimensional. Therefore statistical multi-dimensional simulation of IC technology accounting for fluctuations of process parameters becomes more and more important. We present preliminary results of the statistical performance of the response surface methodology applied to numerical process and device simulation for the evaluation of the influence of random process fluctuations on the device performance.Keywords: IC technology/device/circuit design and simulation, semiconductor yield improvement, statistical fluctuations of process parameters, Monte-Carlo loop, design of experiments, response surface methodology.
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