Technology and electric characteristics of the field-effect hall sensor based on SOI structure

Dolgyi, L.; Lovshenko, I. Yu.; Nelayev, Vladislav

doi:10.1134/s1063739713070056

Cited by 8 publications

(9 citation statements)

References 2 publications

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“…Compared to the conventional bulk Si CMOS (complementary metal-oxide-semiconductor) for Hall sensor manufacturing, the choice of fully-depleted silicon-on-insulator (FD-SOI) technology brings several important advantages. The FD-SOI structure not only has the advantages of less noise generation, lower biasing voltage, and higher integration density [5][6][7], but it has also been confirmed that-compared with the bulk structure-the characteristics of the sensors (such as sensitivity and efficiency) are improved because of its thin thickness and low doping concentration [8].…”

Section: Introductionmentioning

confidence: 91%

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Fan

et al. 2020

Sensors

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This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event transient (SET) effects. Via 3D technology computer aided design (TCAD) simulations with insulator fixed charge, radiation, heavy ion, and galvanomagnetic transport models, the performances of the transient current, Hall voltage, sensitivity, efficiency, and offset voltage have been evaluated. For the TID effect, the Hall voltage and sensitivity of the sensor increase after irradiation, while the efficiency and offset voltage decrease. As for TDR and SET effects, when the energy deposited on the sensor during a nuclear explosion or heavy ion injection is small, the transient Hall voltage of the off-state sensor first decreases and then returns to the initial value. However, if the energy deposition is large, the transient Hall voltage first decreases, then increases to a peak value and decreases to a fixed value. The physical mechanisms that produce different trends in the transient Hall voltage have been analyzed in detail.

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Section: Introductionmentioning

confidence: 91%

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Fan

et al. 2020

Sensors

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“…where is the concentration of ionized donors and is the ionized acceptors concentration. Finally we can say that the electrostatic potential V is the solution of the Poisson equation in (3).…”

Section: A Carrier Transport In Semiconductorsmentioning

confidence: 99%

“…Hall Effect sensors have been fabricated in both regular bulk and SOI (Silicon On Insulator) CMOS technologies. However, the advantages of SOI Hall sensors (higher magnetic sensitivity, possibility to use lower biasing voltage, smaller leakage current through the dielectric, less noise, greater radiation resistance [3]) make them more appealing to the industry nowadays.…”

Section: Introductionmentioning

confidence: 99%

Investigation into the capabilities of Hall cells integrated in a non-fully depleted SOI CMOS technological process

Paun

Udrea

2016

Sensors and Actuators A: Physical

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The behaviour of SOI Hall cells integrated in a non-fully depleted SOI ("Silicon-On-Insulator") CMOS technology is investigated, with an emphasis on the study of their main parameters. To meet these objectives, a particular optimum structure has been designed, integrated and subsequently analyzed. The performance evaluation of this Hall cells is carried out by means of both a threedimensional physical model and measurements. The Hall voltage, electrostatic potential distribution, space charge and sensitivity have all been evaluated. In addition, the Hall mobility has been studied through simulations. In order to complete the performance assessment of the Hall cells studied, experimental results for the offset and variation of the sensitivity with the temperature are also provided.

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“…Amongst these advantages of SOI Hall sensors, we can enumerate higher magnetic sensitivity, less noise production, no need for a high bias voltage, enhanced radiation resistance, smaller leakage current through the dielectric, etc. [3]. In [4], a high sensitivity Hall sensor fabricated on a SOI wafer using surface micromachining technique was presented.…”

Section: Introductionmentioning

confidence: 99%