Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Abstract

This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event transient (SET) effects. Via 3D technology computer aided design (TCAD) simulations with insulator fixed charge, radiation, heavy ion, and galvanomagnetic transport models, the performances of the transient current, Hall voltage, sensitivity, efficiency, and offset voltage have been evaluated. For the TID effect, the Hall voltage and sensitivity of the sensor increase after irradiation, while the efficiency and offset voltage decrease. As for TDR and SET effects, when the energy deposited on the sensor during a nuclear explosion or heavy ion injection is small, the transient Hall voltage of the off-state sensor first decreases and then returns to the initial value. However, if the energy deposition is large, the transient Hall voltage first decreases, then increases to a peak value and decreases to a fixed value. The physical mechanisms that produce different trends in the transient Hall voltage have been analyzed in detail.

Challenges and limitation of wearable sensors used in firefighters’ protective clothing

“…Hopkinson et al 173 Active pixel sensor The major alteration after irradiation was a decrease in responsivity Fan et al 174 Magnetic sensor (fully depleted silicon-on-insulator sensor)…”

Effects of Electronic Irradiation on the Characteristics of the Silicon Magnetic Sensitive Transistor

“…Magnetic field measurements are crucial to explore the terrestrial and planetary magnetospheres, and to derive essential information about the surroundings of objective bodies in space [ 1 , 2 ]. Magnetic sensors, as the magnetic field measuring instrument, have been widely researched in order to meet applications in the space, including fluxgate magnetometer [ 3 ], spin-dependent tunnelling magnetometer [ 4 ], anisotropic magneto resistive sensors [ 5 ], giant magnetoresistance (GMR) sensors [ 6 ], Hall magnetic field sensors [ 7 , 8 , 9 ], etc. However, the space is full of a variety of high-energy charged particles and cosmic rays, which may lead to the performance degradation or failure of electronic devices, or even the breakdown of electronic equipment systems [ 10 , 11 , 12 , 13 ].…”

Design and Application of MEMS-Based Hall Sensor Array for Magnetic Field Mapping

“…Hall sensors based on CMOS (Complementary Metal-Oxide-Semiconductor Transistor) technology are widely applied in the manufacturing, medical devices, consumer electronics, automobile, and aerospace fields nowadays due to their low cost, high integration ability, and good reliability [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. Hall sensors have many practical advantages, including non-contact operation, high linearity, physical sturdiness, and versatility [ 8 , 9 , 10 ]. As a result, they have attracted significant attention throughout industry and academia in recent years [ 11 , 12 , 13 ].…”