Statistical many-dimensional simulation of VLSI technology based on response surface methodology

Abstract

With increasing IC packing density IC manufacturing processes are becoming more and more complex and tolerances of process parameters more critical for production yield and product reliability, and thus the economic viability of the IC manufacturing. At the same time IC structures can no longer be treated as one-dimensional or even two-dimensional. Therefore statistical multi-dimensional simulation of IC technology accounting for fluctuations of process parameters becomes more and more important. We present preliminary results of the statistical performance of the response surface methodology applied to numerical process and device simulation for the evaluation of the influence of random process fluctuations on the device performance.Keywords: IC technology/device/circuit design and simulation, semiconductor yield improvement, statistical fluctuations of process parameters, Monte-Carlo loop, design of experiments, response surface methodology.

Computer simulation of the operational characteristics of a microstrip silicon detector

“…The current of SC1 at a time of 0.6 µs reaches a maximum of 0.12 µA, 1.58 µA and 5.39 µA for nitrogen 15 N +4 , iron 56 Fe +15 and xenon 131 Xe +35 , respectively. The ratio of the maximum current of SC1 I 1 to the maximum current of SC2(3) I 2 (I 3 ) is 0.053 (0.052), 0.05 (0.05) and 0.049 (0.048), for nitrogen 15 N +4 , iron 56 Fe +15 and xenon 131 Xe +35 , respectively. Thus, the ratio I 1 /I 2 decreases with increasing LET of the particle.…”

“…Simulation conditions were set as follows: voltage on SCs 1-3 was 0 V; voltage on the substrate was 10 V; ambient temperature was 273 K. Particles with linear energy transfer (LET) equal to 1.81 MeV cm 2 mg −1 , 18.8 MeV cm 2 mg −1 and 55 MeV cm 2 mg −1 , corresponding to 15 N +4 nitrogen ions with energy E = 1.87 MeV, iron 56 Fe +15 ions with an energy of E = 523 MeV and xenon 131 Xe +35 ions with an energy of E = 1217 MeV, respectively. The impact on the device structure peaked at 10 ps and had a Gaussian time profile with a characteristic value of 1 ps.…”

“…The calculation results for the case λ = 5.7 • are shown in figure 5. It was shown that under the influence of nitrogen 15 N +4 HCPs on the SMD structure with decreasing temperature, the currents through SCs 2-3 increased unequally, expressed in both absolute and relative values (table 2).…”

“…The effect of the substrate voltage on the magnitude of currents through SCs 2-3 when exposed to nitrogen 15 N +4 HCPs at angles λ = 0 • and λ = 11.3 • and T = 273 K was studied. The result of calculations for the case λ = 11.3 • are shown in figure 6.…”

“…Simulation of devices exposed to ionizing radiation is carried out using a set of physical and mathematical models that introduce appropriate adjustments to the system of fundamental equations. Optimization of the characteristics of SMD structures was carried out using response surface methodology [14][15][16].…”