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Kouleshoff, Alexander A.; Malyshev, V. S.; Nelayev, Vladislav; Stempitsky, V. R.

doi:10.1023/a:1021861819656

Cited by 1 publication

(2 citation statements)

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“…The optimization procedure was reduced to the mathematical problem of determining the values of significant input factors (X4, X9, X10) in the range of values from 0.9 to 1.1 in relation to the nominal value, providing a decrease in the temporal resolution by 10% in relation to the nominal. Optimization was carried out using a modified Levenberg-Marquardt algorithm, which is used to calculate the response surface describing the dependence between the input and output parameters in an iterative process [14,22,23]. As a result of optimization, the values of the design parameters ensuring a decrease in the temporal resolution by 277 ns, which is 15.5% of the nominal value (X4 = 300 µm, X9 = 10.8 µm, X10 = 16.2 µm), were obtained.…”

Section: Optimizationmentioning

confidence: 99%

See 1 more Smart Citation

Computer simulation of the operational characteristics of a microstrip silicon detector

Dao¹,

Lovshenko²,

Roshchenko³

et al. 2021

Semicond. Sci. Technol.

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This paper presents the results of preliminary device and technological simulation and optimization of the operational characteristics of semiconductor microstrip detectors. We investigated the influence of heavy charged particles with linear energy transfers of 1.81 MeV cm 2 mg −1 , 18.8 MeV cm 2 mg −1 and 55.0 MeV cm 2 mg −1 , corresponding to nitrogen 15 N +4 ions with an energy E = 1.87 MeV, iron 56 Fe +15 ions with an energy E = 523 MeV and xenon 131 Xe +35 ions with an energy E = 1217 MeV, as well as the angle of incidence of the particles and the temperature and voltage on the substrate, on the characteristics of the detector. To improve the characteristics of the detector, a screening experiment was carried out and a series of optimization calculations were performed. The results will be used for the manufacture and testing of design parameters for an experimental batch of the investigated devices.

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Section: Optimizationmentioning

confidence: 99%

“…Simulation of devices exposed to ionizing radiation is carried out using a set of physical and mathematical models that introduce appropriate adjustments to the system of fundamental equations. Optimization of the characteristics of SMD structures was carried out using response surface methodology [14][15][16].…”

Section: Introductionmentioning

confidence: 99%