Aluminum nitride films have been grown by plasma enhanced atomic layer deposition under self limiting growth and CVD like conditions. The films have been characterized by IR spectroscopy, ellipsome try, and Auger exposure spectroscopy. We have examined the influence of the deposition temperature, the reactor purge time after exposure to trimethylaluminum vapor, and the plasma exposure time on the growth rate and composition of the films. Under the deposition conditions studied, the growth rate ranged from 0.1 to 0.26 nm per cycle and the refractive index of the films was 1.52 to 1.98. We obtained films with an aluminum to nitrogen atomic ratio near unity.

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A multicalorimeter is described which allows the measurement of heat production of up to 10 sediment samples simultaneously. System regulation a s well as data processing and evaluation are performed by personal computer. The instrument performs well even a t non-controlled room temperature down to -0.5"C on board a research vessel. First results from tests employing pressure chambers are presented. An example for a deep-sea heat-production proflle 1s given from the Norwegian Basin, depichng subsurface maxlma in benthic activity.