Microwave (MW) plasma in silane-hydrogen and silane-hydrogen-methane mixtures is used effectively for chemical vapor deposition of Si, SiC, diamond, and SiC-diamond composite films; however, the properties of such plasma at pressures of the order of 100 Torr remain largely unexplored. Here we characterize the MW plasma (2.45 GHz) in SiH4 + H2 and SiH4 + СH4 + H2 mixtures (72 Torr) with silane content ranging from 0% to 5% in the process gas using high-resolution optical emission (OE) spectroscopy. Besides the OE lines of C2 dimer, Balmer series of excited atomic hydrogen (Hα, Hβ, Hγ, Hδ, and Hε), and CH radical, we observed atomic Si lines at 263, 288, and 391 nm and a relatively weak SiH emission. Gas temperature Tg of ≈3160 K is assessed from the rotational structure of the C2 dimer (Δν = 0, λ = 516.5 nm) emission band, and the absorbed microwave power density (MWPD) in the plasma fluctuates in the narrow range between 36 and 43 W/cm3 with a slight tendency to decrease with silane addition. The MWPD, intensity ratio Hα/Hβ of hydrogen Balmer series lines (related to excitation temperature Texc), and Si lines’ intensities in OE spectra as functions of SiH4 concentration in H2 and H2 + CH4 mixtures all show an extremum or a kink in slope near a special point at ≈0.5% SiH4. Finally, we produced a silicon carbide film of cubic polytype 3C-SiC on a (111) oriented Si substrate, which was characterized with Raman spectroscopy and x-ray diffraction, and its monocrystalline structure was confirmed.
In this work, the substrate holders of three principal geometries (flat, pocket, and pedestal) were designed based on E-field simulations. They were fabricated and then tested in microwave plasma-assisted chemical vapor deposition process with the purpose of the homogeneous growth of 100-μm-thick, low-stress polycrystalline diamond film over 2-inch Si substrates with a thickness of 0.35 mm. The effectiveness of each holder design was estimated by the criteria of the PCD film quality, its homogeneity, stress, and the curvature of the resulting “diamond-on-Si” plates. The structure and phase composition of the synthesized samples were studied with scanning electron microscopy and Raman spectroscopy, the curvature was measured using white light interferometry, and the thermal conductivity was measured using the laser flash technique. The proposed pedestal design of the substrate holder could reduce the stress of the thick PCD film down to 1.1–1.4 GPa, which resulted in an extremely low value of displacement for the resulting “diamond-on-Si” plate of Δh = 50 μm. The obtained results may be used for the improvement of already existing, and the design of the novel-type, MPCVD reactors aimed at the growth of large-area thick homogeneous PCD layers and plates for electronic applications.
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