Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

Тарала, В.А.; Ambartsumov, M.G.; Altakhov, A. S.; Martens, V. Ya.; Shevchenko, Mikhail

doi:10.1016/j.jcrysgro.2016.10.015

Cited by 16 publications

(5 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ozgit et al [ 13 ] obtained (100)-oriented polycrystalline AlN films on Si (100) substrates. Epitaxial growth of (002)-oriented crystalline AlN films on GaN and sapphire were achieved [ 14 , 15 ]. However, high-quality (002)-preferred orientation AlN films on silicon substrates have not been realized at low temperature up to now.…”

Section: Introductionmentioning

confidence: 99%

PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity

et al. 2017

View full text Add to dashboard Cite

Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated. Under saturated deposition conditions, the clearly resolved fringes are observed from X-ray reflectivity (XRR) measurements, showing the perfectly smooth interface between the AlN film and Si (100). It is consistent with high-resolution image of the sharp interface analyzed by transmission electron microscope (TEM). The highly uniform thickness throughout the 2-inch size AlN film with blue covered surface was determined by spectroscopic ellipsometry (SE). Grazing incident X-ray diffraction (GIXRD) patterns indicate that the AlN films are polycrystalline with wurtzite structure and have a tendency to form (002) preferential orientation with increasing of the thickness. The obtained AlN films could open up a new approach of research in the use of AlN as the template to support gallium nitride (GaN) growth on silicon substrates.

show abstract

Section: Introductionmentioning

confidence: 99%

PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity

et al. 2017

View full text Add to dashboard Cite

show abstract

“…Figure 3c is the XRD pattern of AlN powder, and it can be observed that there are three strong reflection peaks from 2θ of 30°–40°: 33.32°, 36.15° and 38.02°, which respectively correspond to (100), (002), and (002) of hexagonal polycrystalline AlN in reference [33]. In addition, the reflection peaks at (102) and (103) also indicate that they are hexagonal polytype AlN 34 …”

Section: Resultsmentioning

confidence: 99%

Investigation of self‐cleaning and bouncing properties of superhydrophobic aluminum nitride/silicone rubber

Zhou

2021

J of Applied Polymer Sci

View full text Add to dashboard Cite

In order to investigate the effect of aluminum nitride (AlN) on the self‐cleaning and bouncing properties of room temperature vulcanized (RTV) silicone rubber, a superhydrophobic AlN/RTV composite with micro‐nano structure was prepared by powder scattering technology. The method combines the characteristics of RTV curing at room temperature, and has the advantages of simple operation, low cost and easy realization. Bouncing experiments, with different droplet sizes, different tilting angles and different temperatures, and self‐cleaning experiments were designed. The micro‐morphology of superhydrophobic surface was analyzed by Raman spectroscopy, scanning electron microscope, energy dispersive spectrometer, and interferometric 3D profilometer. The results show that the static contact angle and the rolling angle of AlN/RTV are 157.7 ± 0. 9° and 4.2 ± 0.7°, respectively. Many micro‐roughness structures were formed on the RTV surface by AlN, which reduced the contact area between droplets and the sample surface, so the samples had outstanding self‐cleaning and bouncing properties.

show abstract

“…A comparison of asdeposited and annealed AlN films was presented which revealed that hydrogen impurities in the as grown films desorb after annealing at 400 °C and films started to oxidize after 600 °C [145]. In another report, it was argued that AlN films grown at low temperatures on sapphire have higher crystallinity when compared to the same films grown on silicon substrates [153]. Current transport mechanism was evaluated by fabricating and measuring metal-insulatorsemiconductor (MIS) capacitor devices whereby ohmic conduction, trap assisted tunneling, and Frenkel-Poole (FP) emission were determined to be the main electrical transport mechanisms [150].…”

Section: Nitridesmentioning

confidence: 99%

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Bıyıklı

Haider

2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/ quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

show abstract

Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

Cited by 16 publications

References 28 publications

PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity

PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity

Investigation of self‐cleaning and bouncing properties of superhydrophobic aluminum nitride/silicone rubber

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Contact Info

Product

Resources

About