Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

Тарала, В.А.; Altakhov, A. S.; Martens, V. Ya.; Lisitsyn, S. V.

doi:10.1088/1742-6596/652/1/012034

Cited by 6 publications

(5 citation statements)

References 11 publications

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“…Amorphous AlN is consistent with the reduced band gap value (4.7 eV) of AlN as modeled from SE measurement. ALD AlN thin films grown at 250–300 °C have previously been reported to vary from amorphous to crystalline wurtzite phase. , TiN films grow crystalline and highly oriented cubic phase with a clear (200) peak at 42.8° but without indication of (111) planes parallel to the substrate, despite both (111) and (200) preferred orientations previously reported for TiN films prepared by various methods including thermal ALD, , reactive evaporation, cathodic arc plasma deposition, and magnetron reactive sputtering. − The dominant orientations of TiN films depend on several factors including the deposition condition, Ti–N stoichiometry, and film thickness . Surprisingly, we observe that even a small fraction of Al substitution dramatically alters the preferred orientation of TiN films.…”

Section: Resultsmentioning

confidence: 98%

“…The measured growth rates are in the range of those previously reported for TiN (0.22−0.8 Å/cycle) and AlN films (0.8−1.0 Å/cycle) grown by PEALD. [11][12][13]29,30 The fitted thickness increase was continuously monitored via in situ SE at a frequency of ∼0.4 Hz, Figure 1. Approximately, 14 cycles of TiN are required before the full growth rate was achieved on the native Si oxide surface under our standard growth conditions.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Plasma-Enhanced Atomic Layer Deposition of TiAlN: Compositional and Optoelectronic Tunability

Jeon

Lightcap

Mandia

et al. 2019

ACS Appl. Mater. Interfaces

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Titanium nitride (TiN) is a unique refractory plasmonic material, the nanocomposites and alloys of which provide further opportunities to tailor its optical and photonic properties. We prepare TiAlN films of continuously variable compositions through the systematic variation of TiN versus AlN cycle ratio in plasma-enhanced atomic layer deposition (PEALD) and investigate the resulting thin-film composition, crystallinity, and optical properties. The resulting properties of TiAlN films are not simple linear combinations of the TiN and AlN films, which exhibit distinct metallic and dielectric properties, but instead are dramatically influenced by the local chemical environment of neighboring constituents. In situ spectroscopic ellipsometry further enables measurement of the varying optical properties of TiAlN films, which evolve over 10 s of nm of film thickness. The tunable optoelectronic properties of TiAlN films enable durable coatings of variable electrical resistance as well as high-temperature diffusion barriers and optical coatings with application to selective solar absorbers and emitters.

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Section: Resultsmentioning

confidence: 98%

Section: ■ Results and Discussionmentioning

confidence: 99%

Plasma-Enhanced Atomic Layer Deposition of TiAlN: Compositional and Optoelectronic Tunability

Jeon

Lightcap

Mandia

et al. 2019

ACS Appl. Mater. Interfaces

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“…Besides this classic set of precursors, other precursors and combinations have been introduced. Alternative nitrogen precursors are forming gas (N 2 + H 2 ), ,− hydrazine (N 2 H 4 ), − hydrazinium chloride (N 2 H 5 Cl), and monomethyl hydrazine (N 2 CH 6 ) . Alternative metal precursors are AlCl 3 , ,− TEA, , TMAA, , TDMAA, ,− DMEAA, − TDEAA, TiBA, and DMAA .…”

Section: Introductionmentioning

confidence: 99%

Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Aluminum Nitride

van der Wel,

van der Zouw,

Aarnink

et al. 2023

J. Phys. Chem. C

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This work demonstrates intrinsic area-selective deposition of AlN films by thermal atomic layer deposition (ALD). Using sequential pulses of trimethylaluminum and NH 3 at a substrate temperature of 623 K, polycrystalline AlN was selectively formed on a thin layer of sputtered AlN that was patterned on thermal SiO 2 grown on Si substrates. A pretreatment to remove native AlO x N y facilitated the selective growth of ALD-AlN. Transmission electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and atomic force microscopy examined the interfaces and layer thickness. As reported in this article, the deposition of AlN exhibits intrinsic selectivity, a trait that can be exploited to grow other III-nitrides selectively, such as GaN.

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“…The roughness of AlN films increased with higher deposition temperature and thicker film [31]. Tarala et al obtained crystalline AlN using PEALD at temperatures less than 300 • C [32]. Shih et al used ALD to deposit high-quality single-crystal hexagonal AlN, employing in-situ treatment.…”

Section: Introductionmentioning

confidence: 99%

Structural, Surface, and Optical Properties of AlN Thin Films Grown on Different Substrates by PEALD

Liu

Tao

et al. 2023

Crystals

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Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN) thin films on Si (100), Si (111), and c-plane sapphire substrates at 250 °C. Trimethylaluminum and Ar/N2/H2 plasma were utilized as Al and N precursors, respectively. The properties of AlN thin films grown on various substrates were comparatively analyzed. The investigation revealed that the as-grown AlN thin films exhibit a hexagonal wurtzite structure with preferred c-axis orientation and were polycrystalline, regardless of the substrates. The sharp AlN/substrate interfaces of the as-grown AlN are indicated by the clearly resolved Kiessig fringes measured through X-ray reflectivity. The surface morphology analysis indicated that the AlN grown on sapphire displays the largest crystal grain size and surface roughness value. Additionally, AlN/Si (100) shows the highest refractive index at a wavelength of 532 nm. Compared to AlN/sapphire, AlN/Si has a lower wavelength with an extinction coefficient of zero, indicating that AlN/Si has higher transmittance in the visible range. Overall, the study offers valuable insights into the properties of AlN thin films and their potential applications in optoelectronic devices, and provides a new technical idea for realizing high-quality AlN thin films with sharp AlN/substrate interfaces and smooth surfaces.

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Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

Cited by 6 publications

References 11 publications

Plasma-Enhanced Atomic Layer Deposition of TiAlN: Compositional and Optoelectronic Tunability

Plasma-Enhanced Atomic Layer Deposition of TiAlN: Compositional and Optoelectronic Tunability

Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Aluminum Nitride

Structural, Surface, and Optical Properties of AlN Thin Films Grown on Different Substrates by PEALD

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