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We demonstrate that the resistive switching phenomenon observed in organic semiconductor layers containing granular metal particles conforms to a charge storage mechanism described by Simmons and Verderber ͓Proc. R. Soc. A 391, 77 ͑1967͔͒. The space-charge field due to the stored charge inhibits further charge injection from the electrodes. The equilibrium current-voltage curve is N shaped and the low and high resistance states are obtained by applying voltage close to the local maximum and minimum, respectively.

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High‐quality Cu(In,Ga)Se2 (CIGS) films are deposited from hydrazine‐based solutions and are employed as absorber layers in thin‐film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well‐formed grain structure without requiring post‐deposition high‐temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination).

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