2008
DOI: 10.1002/adma.200800555
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A High‐Efficiency Solution‐Deposited Thin‐Film Photovoltaic Device

Abstract: High‐quality Cu(In,Ga)Se2 (CIGS) films are deposited from hydrazine‐based solutions and are employed as absorber layers in thin‐film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well‐formed grain structure without requiring post‐deposition high‐temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination).

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Cited by 349 publications
(324 citation statements)
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“…However, there are limitations to use these materials in the production of photovoltaic (PV) devices as an absorber layer due to toxicity of Cd and Se as well as limited availability of Te, Cd and In [5]. Bismuth is non-toxic and easily available as compared to indium.…”
Section: Introductionmentioning
confidence: 99%
“…However, there are limitations to use these materials in the production of photovoltaic (PV) devices as an absorber layer due to toxicity of Cd and Se as well as limited availability of Te, Cd and In [5]. Bismuth is non-toxic and easily available as compared to indium.…”
Section: Introductionmentioning
confidence: 99%
“…Historically, conventional photovoltaics, namely crystalline silicon (c-Si), have been very expensive and this has led to a burgeoning field of research in solar technologies fabricated from fundamentally low-cost materials employing fundamentally lowcost fabrication methods [1][2][3][4][5] . Among these, the lowest cost and highest throughput method of fabrication is solution based reelto-reel printing 6 .…”
mentioning
confidence: 99%
“…6 Non-vacuum processes developed so far, however, have still limitations. The nanocrystal-ink method involves multi-step processes including separation and purification of the CIS particulates from impurity residues, otherwise the foreign elements caused by additives and suspension stabilizers may deteriorate the crystallinity and the electronic property of CIS layer.…”
mentioning
confidence: 99%
“…2 Recently, several research groups have proposed different non-vacuum deposition processes for CIS solar cell. [3][4][5][6] For example, H. W. Hillhouse et al prepared the CIS absorber layer by using "nanocrystal ink method" in which a colloidal nanocrystal ink was obtained from reaction of CuCl, InCl 3 and Se in oleylamine.…”
mentioning
confidence: 99%