We demonstrate that the resistive switching phenomenon observed in organic semiconductor layers containing granular metal particles conforms to a charge storage mechanism described by Simmons and Verderber ͓Proc. R. Soc. A 391, 77 ͑1967͔͒. The space-charge field due to the stored charge inhibits further charge injection from the electrodes. The equilibrium current-voltage curve is N shaped and the low and high resistance states are obtained by applying voltage close to the local maximum and minimum, respectively.

Non‐volatile solid‐state memory cells based on composites of metal nanoparticles and polymers are embedded in organic semiconducting host materials. This paper presents data from a wide range of materials and device structures and shows that the switching phenomenon is commonly observed.

Finer geometry and sophisticated circuit design reduce the size and power of focal plane array detectors for a range of imaging applications, while lowering costs and increasing operability.

Raytheon has built hybrid focal planes based on Silicon P-I-N photo-sensors for the past three decades. The device has undergone a continuous improvement process during this period. The detector material has been improved and the thickness has been greatly reduced. Most recently, the readout integrated circuit (ROIC) and the hybridization process, have undergone significant advancements 1,2,3 . This paper presents recent advancements in the latest generation 8µm pixelpitch 1k 2 format and 5k 2 format visible Si PIN focal-planes. The current family of devices has very low read-noise ROICs, low detector dark current, operate with a 25 volt bias and deliver 50% mean response operability greater than 99.995%.