Organic Materials and Thin‐Film Structures for Cross‐Point Memory Cells Based on Trapping in Metallic Nanoparticles

Bozano, Luisa; Kean, B. W.; Beinhoff, Matthias; Carter, Kenneth R.; Rice, Phil; Scott, J. C.

doi:10.1002/adfm.200500130

Cited by 352 publications

(294 citation statements)

References 22 publications

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“…9 Semiconducting materials, for example, MoO 3 and so on, 10 with suitable energy band levels can also be used in place of the metal particles. However, as shown by the vast differences in the electrical characteristics of the devices fabricated in different laboratories, 3,[6][7][8] the reproducibility of the device depends very much on the vacuum chamber and deposition conditions. Therefore, a more repeatable fabrication process is required for the large-scale manufacture of such devices.…”

Section: Device Structure and Fabrication Of The Nonvolatile Memory Dmentioning

confidence: 99%

“…The metal layer has been shown not to form a continuous film when the deposition rate and the thickness are low (Figure 1). [6][7][8] For the case of aluminum, aluminum oxide may be formed spontaneously because of residual oxygen in the vacuum chamber. 6 This insulating oxide layer is believed to be important as it can improve the charge retention properties of the nanoparticles.…”

Section: Device Structure and Fabrication Of The Nonvolatile Memory Dmentioning

confidence: 99%

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Electrical memory devices based on inorganic/organic nanocomposites

Kim

Yang²,

et al. 2012

NPG Asia Mater

167

110

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Nonvolatile memory devices based on hybrid inorganic/organic nanocomposites have emerged as excellent candidates for promising applications in next-generation electronic and optoelectronic devices. Among the various types of nonvolatile memory devices, organic bistable devices fabricated utilizing hybrid organic/inorganic nanocomposites have currently been receiving broad attention because of their excellent performance with high-mechanical flexibility, simple fabrication and low cost. The prospect of potential applications of nonvolatile memory devices fabricated utilizing hybrid nanocomposites has led to substantial research and development efforts to form various kinds of nanocomposites by using various methods. Generally, hybrid inorganic/organic nanocomposites are composed of organic layers containing metal nanoparticles, semiconductor quantum dots (QDs), core-shell semiconductor QDs, fullerenes, carbon nanotubes, graphene molecules or graphene oxides (GOs). This review article describes investigations of and developments in nonvolatile memory devices based on hybrid inorganic/organic nanocomposites over the past 5 years. The device structure, fabrication and electrical characteristics of nonvolatile memory devices are discussed, and the switching and carrier transport mechanisms in the hybrid nonvolatile memory devices are reviewed. Furthermore, various flexible memory devices fabricated utilizing hybrid nanocomposites are described and their future prospects are discussed.

show abstract

Section: Device Structure and Fabrication Of The Nonvolatile Memory Dmentioning

confidence: 99%

Section: Device Structure and Fabrication Of The Nonvolatile Memory Dmentioning

confidence: 99%

Electrical memory devices based on inorganic/organic nanocomposites

Kim

Yang²,

et al. 2012

NPG Asia Mater

167

110

View full text Add to dashboard Cite

show abstract

“…Among the above, the targets of development are centered around trap-type organic memories based on carrier trapping at channel-insulator interfaces 24) and organic FeRAMs. [25][26][27][28] In particular, various organic materials with ferroelectric properties have been reported, and FeRAMs are considered as one of the most suitable memories for largearea electronics because of their low-power operability and a possible operation speed higher than that of other memories.…”

Section: Flexible Memoriesmentioning

confidence: 99%

Ambient Electronics

Sekitani

Someya

2012

Jpn. J. Appl. Phys.

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“…Rather than encoding '0' and '1' as the amount of charge stored in a cell, a polymer memory stores data in another form, based on the high-and low-conductivity response to an applied voltage (electrical bistability; Raymo 2002). In the earlier fine works on polymer memory effects, both volatile and non-volatile memory effects based on bistable electrical conductivity switching have been observed (Bandhopadhyay & Pal 2003;Bozano et al 2005;Paul et al 2006;Verbakel et al 2006;Wang et al 2006;Yang et al 2006). Recently, multi-level conductance switching in polymer films has also been demonstrated (Lauters et al 2006).…”

Section: Introductionmentioning

confidence: 99%

Tristable electrical conductivity switching in a polyfluorene–diphenylpyridine copolymer with pendant carbazole groups

Liu

Liaw

Lee

et al. 2009

Phil. Trans. R. Soc. A.

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Tristable electrical conductivity switching and non-volatile memory effects are demonstrated in a conjugated copolymer of poly(2,6-diphenyl-4-((9-ethyl)-9H -carbazole)-pyridinyl-alt-2,7-(9,9-didodecyl)-9H -fluorenyl) (PPCzPF). The indium-tin oxide (ITO)/PPCzPF/Al device can be switched from the low-conductivity (off) state to the first high-conductivity (on-1) state at 1.8 V, with an on/off current ratio of approximately 100. The device can be further switched from the on-1 state to the next higher conductivity (on-2) state at 2.4 V, with an on-2/on-1 current ratio of approximately 20. All the three conductivity states are accessible, stable and nonerasable. The tri-level conductance switching can be explained in terms of field-induced conformational ordering of the polymer chains and enhanced charge-transfer interaction at the PPCzPF/ITO interface.

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Organic Materials and Thin‐Film Structures for Cross‐Point Memory Cells Based on Trapping in Metallic Nanoparticles

Cited by 352 publications

References 22 publications

Electrical memory devices based on inorganic/organic nanocomposites

Electrical memory devices based on inorganic/organic nanocomposites

Ambient Electronics

Tristable electrical conductivity switching in a polyfluorene–diphenylpyridine copolymer with pendant carbazole groups

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