Tristable electrical conductivity switching in a polyfluorene–diphenylpyridine copolymer with pendant carbazole groups

Liu, Gang; Liaw, Der‐Jang; Lee, Wei-Yi; Ling, Qidan; Zhu, Chunxiang; Chan, D.S.H.; Kang, En‐Tang; Neoh, K. G.

doi:10.1098/rsta.2008.0262

Cited by 24 publications

(16 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Interestingly, a tristable electrical conductivity switching memory effect was observed for a conjugated copolymer of poly(2,6‐diphenyl‐4‐((9‐ethyl)‐9 H ‐carbazole)‐pyridinyl‐alt‐2,7‐(9,9‐didodecyl)‐9 H ‐fluorenyl) ( P27 , Scheme ) . The ITO/ P27 /Al device can be switched from the low‐conductivity state to the first high‐conductivity (ON‐1) state at 1.8 V, with an ON/OFF current ratio of approximately 100.…”

Section: Functional Polymers For Non‐volatile Memory Devicesmentioning

confidence: 99%

Polymer‐Based Resistive Memory Materials and Devices

et al. 2013

View full text Add to dashboard Cite

Due to the advantages of good scalability, flexibility, low cost, ease of processing, 3D-stacking capability, and large capacity for data storage, polymer-based resistive memories have been a promising alternative or supplementary devices to conventional inorganic semiconductor-based memory technology, and attracted significant scientific interest as a new and promising research field. In this review, we first introduced the general characteristics of the device structures and fabrication, memory effects, switching mechanisms, and effects of electrodes on memory properties associated with polymer-based resistive memory devices. Subsequently, the research progress concerning the use of single polymers or polymer composites as active materials for resistive memory devices has been summarized and discussed. In particular, we consider a rational approach to their design and discuss how to realize the excellent memory devices and understand the memory mechanisms. Finally, the current challenges and several possible future research directions in this field have also been discussed.

show abstract

Section: Functional Polymers For Non‐volatile Memory Devicesmentioning

confidence: 99%

Polymer‐Based Resistive Memory Materials and Devices

et al. 2013

View full text Add to dashboard Cite

show abstract

“…[1e, h, 2] To meet the demands for high-density datas torage (HDDS), one strategyu nder consideration is the realization of multilevel (e.g.,t ernary) memory devices, which can increase the data storagecapacity from 2 n to 3 n . [3] Recently,Kang et al [4] reported ap olymer-based ternary memory device that operated throught wo mechanisms. However,t ernary memory performance is limited to nonvolatile memory,w hich makes it difficult to face the practical demand for varioust ernary memory types.…”

Section: Introductionmentioning

confidence: 99%

“…To meet the demands for high‐density data storage (HDDS), one strategy under consideration is the realization of multilevel (e.g., ternary) memory devices, which can increase the data storage capacity from 2 n to 3 n . Recently, Kang et al . reported a polymer‐based ternary memory device that operated through two mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Different Steric‐Twist‐Induced Ternary Memory Characteristics in Nonconjugated Copolymers with Pendant Naphthalene and 1,8‐Naphthalimide Moieties

Wang

et al. 2017

Chemistry An Asian Journal

View full text Add to dashboard Cite

Herein, novel random copolymers PMNN and PMNB were designed and synthesized, and the memory devices Al/PMNN and PMNB/ITO both exhibited ternary memory performance. The switching voltages of the OFF-ON1 and ON1-ON2 transitions for both memory devices are around -2.0 and -3.5 V, respectively, and the ON1/OFF, ON2/ON1 current ratios are both up to 10 . The observed tristable electrical conductivity switching could be attributed to field-induced conformational ordering of the naphthalene rings in the side chains, and subsequent charge trapping by 1,8-naphthalimide moieties. More interestingly, by adjusting the connection sites of 1,8-naphthalimide moieties to tune the steric-twist effect, different memory properties were achieved (PMNN showed nonvolatile write once, read many (WORM) memory behavior, whereas PMNB showed volatile static RAM (SRAM) memory behavior). This result will offer a guideline for the design of different high-performance multilevel memory devices by tuning the steric effects of the chemical moieties.

show abstract

“…In particular, the solution processing capability of organic materials allows them to be handled via dip coating, blade casting, spray coating, spin coating, rollercoating and even ink-jet printing, not only making the more elaborated processes of vacuum deposition of functional thin films eliminable, but allowing the fabrication of flexible memory chips. Extensive studies have been performed on the resistance switching in organic materials, wherein focus has been concentrated on the development of novel materials for memory performance [28][29][30][31][32][33][34][35] optimization.…”

Section: Resistive Switching Mechanisms In Organic Materialsmentioning

confidence: 99%

Recent Advances in Resistive Switching Materials and Devices: From Memories to Memristors

Liu¹,

Chen²,

Gao³

et al. 2018

Eng. Sci.

Self Cite

View full text Add to dashboard Cite

Resistive switching devices have not only been considered as an emerging candidate for the next generation information storage technology, but also demonstrated great potential for in-memory computing systems with greatly enhanced computation capability. This review focuses on the recent advances in resistive materials and devices. We first describe the electric field-induced filamentary conduction model that accounts for the resistive switching behavior observed in inorganic materials, as well as the novel electric field-engineering strategy that is used to optimize the device structure and the memory performance. The alternative ways of using organic and hybrid materials to construct resistive switching devices are then illustrated. By tuning the charge transfer interaction and solid state electrochemical redox properties in small molecules, polymer, metal-organic framework and organic-inorganic hybrid perovskite materials, bistable and multibit memories, as well as the biomimicking memristors have been fabricated. Finally, we discuss the future development of the resistive switching materials and devices, aiming to clarifying the key issues that hinders its practical applications.

show abstract

Tristable electrical conductivity switching in a polyfluorene–diphenylpyridine copolymer with pendant carbazole groups

Cited by 24 publications

References 24 publications

Polymer‐Based Resistive Memory Materials and Devices

Polymer‐Based Resistive Memory Materials and Devices

Different Steric‐Twist‐Induced Ternary Memory Characteristics in Nonconjugated Copolymers with Pendant Naphthalene and 1,8‐Naphthalimide Moieties

Recent Advances in Resistive Switching Materials and Devices: From Memories to Memristors

Contact Info

Product

Resources

About