Mechanism for bistability in organic memory elements

Bozano, Luisa; Kean, B. W.; Deline, V. R.; Salem, J.; Scott, J. C.

doi:10.1063/1.1643547

Cited by 408 publications

(359 citation statements)

References 6 publications

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“…The trapped charge can be removed by applying an even larger voltage bias to the device. 88,89 This model is successful in explaining the negative differential resistance, whereby the current decreases with increasing voltage bias. …”

Section: Splcmentioning

confidence: 99%

“…The metal layer has been shown not to form a continuous film when the deposition rate and the thickness are low (Figure 1). [6][7][8] For the case of aluminum, aluminum oxide may be formed spontaneously because of residual oxygen in the vacuum chamber. 6 This insulating oxide layer is believed to be important as it can improve the charge retention properties of the nanoparticles.…”

Section: Device Structure and Fabrication Of The Nonvolatile Memory Dmentioning

confidence: 99%

“…9 Semiconducting materials, for example, MoO 3 and so on, 10 with suitable energy band levels can also be used in place of the metal particles. However, as shown by the vast differences in the electrical characteristics of the devices fabricated in different laboratories, 3,[6][7][8] the reproducibility of the device depends very much on the vacuum chamber and deposition conditions. Therefore, a more repeatable fabrication process is required for the large-scale manufacture of such devices.…”

Section: Device Structure and Fabrication Of The Nonvolatile Memory Dmentioning

confidence: 99%

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Electrical memory devices based on inorganic/organic nanocomposites

Kim

Yang²,

et al. 2012

NPG Asia Mater

168

110

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Nonvolatile memory devices based on hybrid inorganic/organic nanocomposites have emerged as excellent candidates for promising applications in next-generation electronic and optoelectronic devices. Among the various types of nonvolatile memory devices, organic bistable devices fabricated utilizing hybrid organic/inorganic nanocomposites have currently been receiving broad attention because of their excellent performance with high-mechanical flexibility, simple fabrication and low cost. The prospect of potential applications of nonvolatile memory devices fabricated utilizing hybrid nanocomposites has led to substantial research and development efforts to form various kinds of nanocomposites by using various methods. Generally, hybrid inorganic/organic nanocomposites are composed of organic layers containing metal nanoparticles, semiconductor quantum dots (QDs), core-shell semiconductor QDs, fullerenes, carbon nanotubes, graphene molecules or graphene oxides (GOs). This review article describes investigations of and developments in nonvolatile memory devices based on hybrid inorganic/organic nanocomposites over the past 5 years. The device structure, fabrication and electrical characteristics of nonvolatile memory devices are discussed, and the switching and carrier transport mechanisms in the hybrid nonvolatile memory devices are reviewed. Furthermore, various flexible memory devices fabricated utilizing hybrid nanocomposites are described and their future prospects are discussed.

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Section: Splcmentioning

confidence: 99%

Section: Device Structure and Fabrication Of The Nonvolatile Memory Dmentioning

confidence: 99%

Section: Device Structure and Fabrication Of The Nonvolatile Memory Dmentioning

confidence: 99%

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Electrical memory devices based on inorganic/organic nanocomposites

Kim

Yang²,

et al. 2012

NPG Asia Mater

168

110

View full text Add to dashboard Cite

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“…Recent work on organic memory focused on several aspects, including: (i) understanding of the mechanism (Bozano et al 2004;Bandyopadhyay & Pal 2005;Chen & Ma 2006;Rath et al 2006;Paul 2007); (ii) improvement of device parameters by choosing suitable systems (Bandhopadhyay & Pal 2003;Jiang et al 2008;Portney et al 2008); and (iii) addressability for data-storage applications (Jakobsson et al 2005;Mukherjee & Pal 2007). While electrical and dielectric properties at different temperatures have been studied for understanding the mechanism, donor/acceptor systems or molecules with suitable functional groups have been chosen to improve device parameters (Chu et al 2005;Jakobsson et al 2005;Mukherjee & Pal 2007), such as on/off ratio, retention time, threshold voltage and so on.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of electrical bistability through semiconducting nanoparticles for organic memory applications

Das

Pal

2009

Phil. Trans. R. Soc. A.

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We report that an enhancement in electrical bistability in devices based on organic molecules can be achieved by the introduction of semiconducting nanoparticles. Here, devices based on alternate layers of a dye in the xanthene class and CdSe nanoparticles have been compared with devices based on the individual components. Results from dye/CdSe devices have yielded an appreciable enhancement in electrical bistability compared with those based on the dye or the nanoparticles. The enhancement is due to augmented carrier transport through the nanoparticles to the dye that consequently undergoes a change in its conformation, having a higher conductivity. We have evidenced read-only and random-access memory applications in the dye/nanoparticle hybrid system.

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“…There is currently a need for an electrically addressable nonvolatile memory technology that can be put into organic integrated circuits 10,11 . An interesting option is to make organic FeFETs because of the similarity of the processing procedure and the advantages mentioned above.…”

mentioning

confidence: 99%

High-performance solution-processed polymer ferroelectric field-effect transistors

et al. 2005

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We demonstrate a rewritable, non-volatile memory device with fl exible plastic active layers deposited from solution. The memory device is a ferroelectric fi eld-effect transistor (FeFET) made with a ferroelectric fl uoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor material. The on-and off-state drain currents differ by several orders of magnitude, and have a long retention time, a high programming cycle endurance and short programming time. The remanent semiconductor surface charge density in the on-state has a high value of 18 mC m -2 , which explains the large on/off ratio. Application of a moderate gate fi eld raises the surface charge to 26 mC m -2 , which is of a magnitude that is very diffi cult to obtain with conventional FETs because they are limited by dielectric breakdown of the gate insulator. In this way, the present ferroelectricsemiconductor interface extends the attainable fi eldeffect band bending in organic semiconductors.A memory element based on the ferroelectric fi eld-effect transistor (FeFET) is attractive because of its non-volatile data retention, small size, rewritability, non-destructive read-out, low-voltage operation and short programming time 1 . Its functionality arises from the attenuation of the charge carrier concentration in the semiconductor by the ferroelectric polarization of the gate insulator. Even though inorganic FeFETs have been studied for decades, a memory performance of any practical value has been achieved only in recent years [2][3][4][5][6][7][8] . The main problems that have arisen are charge trapping at the ferroelectric-semiconductor interface and the lack of thermal stability of the interface. This has prompted the use of insulating buffer layers between the semiconductor and ferroelectric to prevent charge injection and protect the semiconductor from the high-temperature annealing procedure that is required for inorganic ferroelectrics. Crucial device parameters for all memory devices are the on/ off ratio, data retention time, programming cycle endurance and programming time. Current state-of-the-art inorganic FeFETs have on/off ratios up to 10 9 , a retention time of 16 days and a programming time of 10 -8 s (refs 5,8). This is promising, although the high production cost of this non-CMOS (complementary metal-oxide-semiconductor) technology may hinder widespread application.Organic fi eld-effect transistors are ideally suited for low-cost, low-performance logic circuit applications on fl exible substrates 9 .

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Mechanism for bistability in organic memory elements

Cited by 408 publications

References 6 publications

Electrical memory devices based on inorganic/organic nanocomposites

Electrical memory devices based on inorganic/organic nanocomposites

Enhancement of electrical bistability through semiconducting nanoparticles for organic memory applications

High-performance solution-processed polymer ferroelectric field-effect transistors

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