We present a new scanning-probe-based data-storage concept called the "millipede" that combines ultrahigh density, terabit capacity, small form factor, and high data rate. Ultrahigh storage density has been demonstrated by a new thermomechanical local-probe technique to store, read back, and erase data in very thin polymer films. With this new technique, nanometer-sized bit indentations and pitch sizes have been made by a single cantilever/tip into thin polymer layers, resulting in a data storage densities of up to 1 Tb/in 2 . High data rates are achieved by parallel operation of large two-dimensional (2-D) atomic force microscope (AFM) arrays that have been batch-fabricated by silicon surface-micromachining techniques. The very large-scale integration (VLSI) of micro/nanomechanical devices (cantilevers/tips) on a single chip leads to the largest and densest 2-D array of 32 32 (1024) AFM cantilevers with integrated write/read/erase storage functionality ever built. Time-multiplexed electronics control the functional storage cycles for parallel operation of the millipede array chip. Initial areal densities of 100-200 Gb/in 2 have been achieved with the 32 32 array chip, which has potential for further improvements. A complete prototype system demonstrating the basic millipede functions has been built, and an integrated five-axis scanner device used in this prototype is described in detail. For millipede storage applications the polymer medium plays a crucial role. Based on a systematic study of different polymers with varying glass-transition temperatures, the underlying physical mechanism of bit writing has been identified, allowing the correlation of polymer properties with millipede-relevant parameters. In addition, a novel erase mechanism has been established that exploits the metastable nature of written bits.Index Terms-Atomic force microscope (AFM) array chips, microscanner, millipede, nano-indentation, polymer films, scanning probe data storage, thermomechanical write/read/erase.
The transport of minute amounts of liquids using microfluidic systems has opened avenues for higher throughput and parallelization of miniaturized bio/chemical processes combined with a great economy of reagents. In this report, we present a microfluidic capillary system (CS) that autonomously transports aliquots of different liquids in sequence: liquids pipetted into the service port of the CS flow unidirectionally through the various sections of the CS, which comprises a 15-pL reaction chamber, into the capillary pump. A CS can thus be operated by simply delivering the different samples to its service port. The liquid transport concept presented here is advantageous because the pumping and valving functions are integrated into the device by means of capillary phenomena, and it therefore does not require any external power supply or control device. Thus, arrays of CSs can easily be formed by cloning a functional CS. Alternatively, the flow of liquids in CSs can also be interactively tuned if desired by (i) forcing the evaporating of liquid out of the capillary pumps and (ii) by contacting a secondary, removable capillary pump to the embedded ones. We illustrate the possibilities of CSs by conducting a surface immunoassay for a cardiac marker, within 25 min, on an area of 100 x 100 microm2, using 16 sequential filling steps.
In stark contrast to ordinary metals, in materials in which electrons strongly interact with each other or with phonons, electron transport is thought to resemble the flow of viscous fluids. Despite their differences, it is predicted that transport in both conventional and correlated materials is fundamentally limited by the uncertainty principle applied to energy dissipation. Here we report the observation of experimental signatures of hydrodynamic electron flow in the Weyl semimetal tungsten diphosphide. Using thermal and magneto-electric transport experiments, we find indications of the transition from a conventional metallic state at higher temperatures to a hydrodynamic electron fluid below 20 K. The hydrodynamic regime is characterized by a viscosity-induced dependence of the electrical resistivity on the sample width and by a strong violation of the Wiedemann–Franz law. Following the uncertainty principle, both electrical and thermal transport are bound by the quantum indeterminacy, independent of the underlying transport regime.
Understanding friction and wear at the nanoscale is important for many applications that involve nanoscale components sliding on a surface, such as nanolithography, nanometrology and nanomanufacturing. Defects, cracks and other phenomena that influence material strength and wear at macroscopic scales are less important at the nanoscale, which is why nanowires can, for example, show higher strengths than bulk samples. The contact area between the materials must also be described differently at the nanoscale. Diamond-like carbon is routinely used as a surface coating in applications that require low friction and wear because it is resistant to wear at the macroscale, but there has been considerable debate about the wear mechanisms of diamond-like carbon at the nanoscale because it is difficult to fabricate diamond-like carbon structures with nanoscale fidelity. Here, we demonstrate the batch fabrication of ultrasharp diamond-like carbon tips that contain significant amounts of silicon on silicon microcantilevers for use in atomic force microscopy. This material is known to possess low friction in humid conditions, and we find that, at the nanoscale, it is three orders of magnitude more wear-resistant than silicon under ambient conditions. A wear rate of one atom per micrometre of sliding on SiO(2) is demonstrated. We find that the classical wear law of Archard does not hold at the nanoscale; instead, atom-by-atom attrition dominates the wear mechanisms at these length scales. We estimate that the effective energy barrier for the removal of a single atom is approximately 1 eV, with an effective activation volume of approximately 1 x 10(-28) m.
We report a simple atomic force microscopy-based concept for a hard disk-like data storage technology. Thermomechanical writing by heating a Si cantilever in contact with a spinning polycarbonate disk has already been reported. Here the medium has been replaced with a thin polymer layer on a Si substrate, resulting in significant improvements in storage density. With this new medium, we achieve bit sizes of 10-50 nm, leading to data densities of 500 Gbit/in. 2 . We also demonstrate a novel high-speed and high-resolution thermal readback method, which uses the same Si cantilevers that are used in the writing process, and the capability to erase and rewrite data features repeatedly.
Metallic atomic junctions pose the ultimate limit to the scaling of electrical contacts 1 . They serve as model systems to probe electrical and thermal transport down to the atomic level as well as quantum effects occurring in one-dimensional systems 2 . Charge transport in atomic junctions has been studied intensively in the last two decades 2,3,4,5 . However, heat transport remains poorly characterized because of significant experimental challenges. Specifically the combination of high sensitivity to small heat fluxes and the formation of stable atomic contacts has been a major hurdle for the development of this field. Here we report on the realization of heat transfer measurements through atomic junctions and analyze the thermal conductance of single atomic gold contacts at room temperature. Simultaneous measurements of charge and heat transport reveal the proportionality of electrical and thermal conductance, quantized with the respective conductance quanta 6 . This constitutes an atomic scale verification of the well-known Wiedemann-Franz law 7 . We anticipate that our findings will be a major advance in enabling the investigation of heat transport properties in molecular junctions, with meaningful implications towards the manipulation of heat at the nanoscale. IntroductionHeat transport and dissipation at the nanoscale has spurred research interest as it severely limits scaling of high performance electronic devices and circuits 8 . Atomic quantum point contacts represent an ideal platform to investigating heat transport in which quantum confinement effects cannot be neglected. The development of experimental techniques, such as scanning tunneling microscopy (STM) and mechanically controlled break junction (MCBJ) enabled the formation and manipulation of monoatomic metallic chains 3,4,5 . Using these techniques, charge transport in atomic junctions has been studied intensively 2,3,4,5 , and, more recently, Joule dissipation 9,10 and thermoelectric effects 11,12 have been successfully probed. Recently, heat dissipation was measured in current-carrying single gold-gold contacts by means of STM with an integrated micro thermocouple in the tip 9 . It was shown that heat dissipates symmetrically into the two contacts, confirming that the electron transmission function T(E) of the junction element around the Fermi energy of the metallic contacts governs this phenomenon. Despite these recent steps forward, the properties of heat conduction through atomic junctions still remain to be fully explored.Electrical conductance in atomic junctions is quantized. A single gold atom contact has a conductance equal to the quantum G0 = 2e 2 /h, where e is the electron charge and h Planck's constant. The Landauer approach used to describe charge transport can also be applied to predict heat transport 13 and predicts the validity of the Wiedemann-Franz (WF) law, which states that the thermal conductance GTH and the electrical conductance GEL are proportional to each other,where T is the absolute temperature and the proportio...
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