Hybrid photonic integration exploits complementary strengths of different material platforms, thereby offering superior performance and design flexibility in comparison to monolithic approaches. This applies in particular to multi-chip concepts, where components can be individually optimized and tested on separate dies before integration into more complex systems. The assembly of such systems, however, still represents a major challenge, requiring complex and expensive processes for high-precision alignment as well as careful adaptation of optical mode profiles. Here we show that these challenges can be overcome by in-situ nano-printing of freeform beam-shaping elements to facets of optical components. The approach is applicable to a wide variety of devices and assembly concepts and allows adaptation of vastly dissimilar mode profiles while considerably relaxing alignment tolerances to the extent that scalable, cost-effective passive assembly techniques can be used. We experimentally prove the viability of the concept by fabricating and testing a selection of beam-shaping elements at chip and fiber facets, achieving coupling efficiencies of up to 88 % between an InP laser and an optical fiber. We also demonstrate printed freeform mirrors for simultaneously adapting beam shape and propagation direction, and we explore multi-lens systems for beam expansion. The concept paves the way to automated fabrication of photonic multi-chip assemblies with unprecedented performance and versatility.

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Three-dimensional (3D) nano-printing of freeform optical waveguides, also referred to as photonic wire bonding, allows for efficient coupling between photonic chips and can greatly simplify optical system assembly. As a key advantage, the shape and the trajectory of photonic wire bonds can be adapted to the mode-field profiles and the positions of the chips, thereby offering an attractive alternative to conventional optical assembly techniques that rely on technically complex and costly high-precision alignment. However, while the fundamental advantages of the photonic wire bonding concept have been shown in proof-of-concept experiments, it has so far been unclear whether the technique can also be leveraged for practically relevant use cases with stringent reproducibility and reliability requirements. In this paper, we demonstrate optical communication engines that rely on photonic wire bonding for connecting arrays of silicon photonic modulators to InP lasers and single-mode fibres. In a first experiment, we show an eight-channel transmitter offering an aggregate line rate of 448 Gbit/s by low-complexity intensity modulation. A second experiment is dedicated to a four-channel coherent transmitter, operating at a net data rate of 732.7 Gbit/sa record for coherent silicon photonic transmitters with co-packaged lasers. Using dedicated test chips, we further demonstrate automated mass production of photonic wire bonds with insertion losses of (0.7 ± 0.15) dB, and we show their resilience in environmental-stability tests and at high optical power. These results might form the basis for simplified assembly of advanced photonic multi-chip systems that combine the distinct advantages of different integration platforms.

A key device in all-optical networks is the optical filter. A ring resonator filter with an integrated semiconductor optical amplifier (SOA) on the basis of GaInAsP-InP has been investigated and fabricated. A required passband shape of loss-compensated ring resonator filters can be custom-designed by the use of multiple coupled resonators. Results of single-, double-, and triple-ring resonators with integrated SOAs with free spectral ranges of 12.5, 25, and 50 GHz, respectively, are presented. A box-like filter response is obtained by the double- and triple-ring resonators using specific coupling coefficient

SrS:Ce is an intensively investigated phosphor due to its blue-green electroluminescence, which shows efficient blue emission after filtering. Recently reported devices based on this material have demonstrated a luminous efficiency of 1.6 lm/W. The luminescence properties of SrS:Ce,X (X=Na or Cl) have been studied on powders and thin films. It is shown that a high density of traps in SrS:Ce,X occurs. The interaction of Ce3+ with traps gives rise to a phosphorescence. An energy transfer from Ce3+ to traps is responsible for an observed luminescence quenching in the presence of high electric fields. Moreover, the traps are electrically active and are involved in the electroluminescence process. The observed energy transfer is proposed to be the dominant excitation mechanism of Ce3+ in electroluminescence. It is demonstrated for thin films that the defect density increases with doping; therefore, the luminescence yield is already limited at doping concentrations below the onset of the concentration quenching. Thus, the prepared SrS:Ce,Cl thin films show a lower photoluminescence yield than powders. It is concluded that an undisturbed Ce incorporation into SrS thin films has not been achieved so far, although high electroluminescence efficiencies (1.6 lm/W) have been obtained.

The filter response of single-ring resonators with integrated semiconductor optical amplifiers based on GaInAsP-InP is presented. The devices with free spectral ranges of 25 and 50 GHz have the form of a racetrack. An on-off ratio of 20 dB, a full-width at half-maximum of 12 and 24 pm, a finesse of 17, and a Q factor of 130,000 and 65,000, respectively, have been achieved. The tuning to a specific wavelength is performed by using integrated Pt-resistors

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