U. Schaper scite author profile

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U. Schaper

5Publications

54Citation Statements Received

12Citation Statements Given

How they've been cited

217

How they cite others

Affiliations

Infineon Technologies (Germany), Siemens (Germany), Fraunhofer Institute for Applied Solid State Physics

Publications

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Scaling properties of the tunneling field effect transistor (TFET): Device and circuit

Nirschl

Henzler

Fischer

et al. 2006

Solid-State Electronics

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Analytical parameter extraction of the HBT equivalent circuit with T-like topology from measured S-parameters

Schaper

Holzapfl

1995

IEEE Trans. Microwave Theory Techn.

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Coplanar integrated mixers for 77-GHz automotive applications

Verweyen

Massler²,

Neumann³

et al. 1998

IEEE Microw. Guid. Wave Lett.

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For integration in receivers at 77 GHz, three passive mixers, a balanced diode mixer, a single ended and a balanced resistive mixer, as well as an active single-ended gate mixer have been realized in coplanar 0.15-mu m PM-HEMT technology on GaAs. The passive mixers achieved conversion losses of about 9 dB. The resistive mixers required an LO power of only 3 dBm and the diode mixer 10 dBm for optimum conversion. The gate mixer obtained a conversion gain of 1 dB for an LO power of 6 dBm but showed higher sensitivity to the IF load

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Low-cost GaAs pHEMT MMIC's for millimeter-wave sensor applications

Siweris

Werthof

Tischer

et al. 1998

IEEE Trans. Microwave Theory Techn.

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Modeling of self-heating in GaAs/AlGaAs HBTs for accurate circuit and device analysis

Baureis

Seitzer

Schaper³

1991

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U. Schaper

Scaling properties of the tunneling field effect transistor (TFET): Device and circuit

Analytical parameter extraction of the HBT equivalent circuit with T-like topology from measured S-parameters

Coplanar integrated mixers for 77-GHz automotive applications

Low-cost GaAs pHEMT MMIC's for millimeter-wave sensor applications

Modeling of self-heating in GaAs/AlGaAs HBTs for accurate circuit and device analysis

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