Analytical parameter extraction of the HBT equivalent circuit with T-like topology from measured S-parameters

Schaper, U.; Holzapfl, B.

doi:10.1109/22.372091

Cited by 53 publications

(18 citation statements)

References 13 publications

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“…The quasi-flat values show the validity of the proposed methodology. We take the mean value as the extracted value for the specified parameter [12]. The behaviour of C f is typically the same as C bc because they are linearly related.…”

Section: Resultsmentioning

confidence: 99%

Extraction of small-signal equivalent circuit model parameters for Si/SiGe HBT using S-parameters measurements and one geometrical information

Taher

Schreurs

Nauwelaers

2006

AEU - International Journal of Electronics and Communications

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Section: Resultsmentioning

confidence: 99%

Extraction of small-signal equivalent circuit model parameters for Si/SiGe HBT using S-parameters measurements and one geometrical information

Taher

Schreurs

Nauwelaers

2006

AEU - International Journal of Electronics and Communications

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“…The first one is that the independent equations are not easy to determine, and the second one is that the plus or minus signs in the equations are probable to be given by mistake. Some papers [1][2][3][4][5] researched the problems, and provided different methods. But the methods either are very inconvenient, or can't be popularized to the general cases.…”

Section: Introductionmentioning

confidence: 99%

A matrix computation method of the equivalent parameters of the conductor systems and the linear networks

Liu

Zhu

et al. 2011

2011 International Conference on Multimedia Technology

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An equation about the equivalent capacitance and the potential coefficients of a conductor system is given. On the basis of the equation, a matrix computation method of the equivalent capacitance of a conductor system is brought forward. The procedure of the method is as follow: write out a matrix about the conductor system according to some rules, firstly, and secondly, do some calculations. The method is simple and convenient, compared with other methods. Further more, the method is popularized to compute the equivalent parameters of the linear networks, based on the principle of duality.

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“…The model core is embedded in an equivalent circuit of passive elements representing the extrinsic regions of the HBT. The values of these parasitic elements are given by material data or are obtained by the parameter extraction method [6] from mneasured S-parameter.…”

Section: Introductionmentioning

confidence: 99%

Physical heterojunction bipolar transistor model for microwave large signal simulation

Schaper

Ahlers

1995

25th European Microwave Conference, 1995

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A new physical large signal HBT model is proposed in this contribution. To our knowledge it is the first time that a physical large signal HBT model is implemented into a circuit simulator. The new HBT model descrbes the transistor action of the intrinsic HBT by an analytic formulation based on physical prnciples. The core of this model comprises emitter, base and oollector layers, the corresponding model parameters are given by material and design data. It is shown that a one dimensional description of the core including an equation for the power balance of the transistor is sufficient to descrbe the self-heating effect in the dc range as well as the junction temperature under large signal conditions. The extrinsic regions of the HBT are modelled by an equivalent circuit with passive elements. The values for these parasitic elements are given by material data and by an extraction method based on measured characterstics.

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Analytical parameter extraction of the HBT equivalent circuit with T-like topology from measured S-parameters

Cited by 53 publications

References 13 publications

Extraction of small-signal equivalent circuit model parameters for Si/SiGe HBT using S-parameters measurements and one geometrical information

Extraction of small-signal equivalent circuit model parameters for Si/SiGe HBT using S-parameters measurements and one geometrical information

A matrix computation method of the equivalent parameters of the conductor systems and the linear networks

Physical heterojunction bipolar transistor model for microwave large signal simulation

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