The electrical properties of uniform coplanar lines on GaAs have been investigated, using a finite element simulator. Experimental results. extracted from on-wafer measurements to 120 GHz, are in good agreement with the simulated results. Frequency dependent models were developed for all characteristic parameters of the coplanar lines, such as impedance, effective relative dielectric constant and attenuation, describing the behavior of coplanar lines of different geometries over the entire frequency range from 0-120 GHz. Similarly, exact models applicable over the am frequency range have been developed for a number of coplanar elements, such as air bridges, 90 degree corners and probing pads. These models have been implemented in our HP-MDS data base, resulting in accurate designs of a number of millimeter wave circuits
For integration in receivers at 77 GHz, three passive mixers, a balanced diode mixer, a single ended and a balanced resistive mixer, as well as an active single-ended gate mixer have been realized in coplanar 0.15-mu m PM-HEMT technology on GaAs. The passive mixers achieved conversion losses of about 9 dB. The resistive mixers required an LO power of only 3 dBm and the diode mixer 10 dBm for optimum conversion. The gate mixer obtained a conversion gain of 1 dB for an LO power of 6 dBm but showed higher sensitivity to the IF load
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