The electronic stopping cross sections for lithium ions in carbon, aluminium, titan, nickel, and copper are reported. The dependence on energy in the interval from 30 to 100 keV and on the atomic number of the target atoms are investigated. By using some data from other authors a characteristic dependence of the electronic stopping cross section on the atomic number of the target atoms is found.Es werden elektronische Bremsquerschnitte fur Lithiumionen in Kohlenstoff, Aluminium, Titan, Nickel und Kupfer mitgeteilt. Ihre Abhangigkeit von der Energie im Bereich 30 bis 100 keV und von der Ordnungszahl der Targetatome wurde untersucht. Unter Verwendung einiger Daten anderer Autoren wurde eine charakteristische Abhiingigkeit des elektronischen Bremsquerschnittes von der Ordnungszahl der Targetatome gefunden.
Low-energy ion implantations in semiconductor materials cause defects in near surface regions, which can sensitively be detected by ellipsometry. By means of a simple analytic model, implantation parameters as ion damage straggling and amorphization threshold can be obtained by using only one-wavelength ellipsometry. This will be demonstrated for the case of argon implantations (500 – 2500 eV) in silicon
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