Determination of Low-Energy Ion Implantation Damage Parameters by an Ellipsometric Method

Abstract

Low-energy ion implantations in semiconductor materials cause defects in near surface regions, which can sensitively be detected by ellipsometry. By means of a simple analytic model, implantation parameters as ion damage straggling and amorphization threshold can be obtained by using only one-wavelength ellipsometry. This will be demonstrated for the case of argon implantations (500 – 2500 eV) in silicon

Room temperature bonding of SiO2 and SiO2 by surface activated bonding method using Si ultrathin films

“…13,30) This layer is formed by Ar atom implantation and has a thickness that is dependent on the Ar beam energy. [31][32][33][34][35][36] As shown in Fig. 4(b), the bonding interface is confirmed to be below the center of the intermediate layer.…”

Spectroscopic Ellipsometry of Ion-Implantation-Induced Damage

“…In the past few decades the spectroscopic ellipsometry was extensively used to investigate ion implantation (Si + , Ge + , B + , P + , As + , Ar + , Xe + , and N 2 + ) of crystalline and polycrystalline silicon (Ibrahim & Bashara, 1972;Adams & Bashara, 1975;Adams, 1976;Jellison et al, 1981;Ohira & Itakura, 1982;Lohner et al, 1983;Vasquez et al, 1985;Vedam et al, 1985;Nguyen & Vedam, 1990;Miyazaki & Adachi, 1993;Fried et al, 1992Fried et al, , 2004Müller-Jahreis et al, 1995;Shibata et al, 1999Shibata et al, , 2010Giri et al, 2001;Tsunoda et al, 2002;Petrik et al, 2003;Yoshida et al, 2005;Stevens et al, 2006;Lioudakis et al, 2006aLioudakis et al, , 2006bPetrik, 2008;Matsuda et al, 2010;Mohacsi et al, 2011). One of the motivations of that was to get non-contact, non-destructive and rapid measurement technique with high accuracy and sensitivity for industrial applications (in particular, for integrated circuits (IC) manufacturing).…”