Spectroscopic Ellipsometry of Ion-Implantation-Induced Damage

Shamiryan, Denis; Likhachev, Dmitriy

doi:10.5772/37758

Cited by 8 publications

(8 citation statements)

References 62 publications

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“…The refractive indices were collected for each of the different layers used in the simulation for varying wavelengths (table 2). Values for the refractive index of a-Si could not be determined using a database, thus the literature was used to determine average values for each wavelength [39][40][41].…”

Section: Resultsmentioning

confidence: 99%

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Modelling technique and analysis of porous anti-reflective coatings for reducing wide angle reflectance of thin-film solar cells

Pickering

Shanks

Sundaram

2021

J. Opt.

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Bio-inspired anti-reflective (AR) coatings with porous graded refractive index structures are known to considerably reduce the reflectance of light at optical interfaces, however, research is lacking for thin-film cell application. Ray Tracing software coupled with the Effective Medium Theory were used to simulate the reflectance of nanostructured coatings placed above a thin-film system. The most optimal coating was paraboloid-shaped, with 300 nm nipple heights and spacings of 15%. The non-zero refractive index ‘step’ aids light trapping and energy absorption. This coating reduced reflectance in the λ = 300–800 nm range by an average of 2.665% and 11.36% at 0∘ and 80∘ incident light, respectively, whilst increasing annual energy output by 4.39% and 5.39% for standard UK roof and vertical window tilts, respectively. Significant wide angle reflectance capabilities are demonstrated at specifically λ = 300 nm and 80∘ incident light, with a reflectance reduction of 19.192%. There are now many promising manufacturing techniques for these porous nanostructures, such as AR or wavelength filtering coatings for photovoltaics. Further understanding of the exact parameters needed to replicate these nanostructures must be explored to proceed.

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Section: Resultsmentioning

confidence: 99%

“…This may be due to the layers limitation which perhaps begins to dominate, however, as previously suggested, this may be an accurate bias for manufacturing Table 2. Database refractive index values for the thin-film cell layers including Glass-BK7 [37], ITO [38], a-Si [39][40][41] and Ag [42].…”

Section: Resultsmentioning

confidence: 99%

Modelling technique and analysis of porous anti-reflective coatings for reducing wide angle reflectance of thin-film solar cells

Pickering

Shanks

Sundaram

2021

J. Opt.

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“…Transmission Electron Microscopy (TEM) is an established tool to investigate these structures, but unfortunately it is very time consuming and difficult to determine at a same time a depth distribution profile of the cavities and an observation when defects of few nm to thousands nm are encountered in the same area. These structures can be studied by Spectroscopic Ellipsometry (SE) and, with appropriate multilayered models, the in-depth profiles of the implantation caused amorphization of Si and the cavity formation after thermal annealing can be evaluated [7,8,9,10]. SE has the advantage over TEM that it is fast, non destructive and so can be used as a feedback control during industrial process.…”

Section: Introductionmentioning

confidence: 99%

Characterization of in-depth cavity distribution after thermal annealing of helium-implanted silicon and gallium nitride

Fodor¹,

Cayrel²,

Agócs³

et al. 2014

Thin Solid Films

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Single-crystalline silicon wafers covered with sacrificial oxide layer and epitaxially grown gallium nitride layers were implanted w ith high-fluence helium ions (2 -610 16 cm −2 ) at energies of 20-30 keV. Thermal annealings at 650-1000 °C, 1 hour were performed on the Si samples and rapid thermal annealings at 900-1150 °C, 60-180 sec under N2 were performed on the GaN samples. The as-implanted samples and the near-surface cavity distributions of the annealed samples were investigated with variable angle spectroscopic ellipsometry. In-depth defect profiles and cavity profiles can be best described with multiple independent effective medium sublayers of varying ratio of single-crystal/void. The number of sublayers was chosen to maximize the fit quality without a high parameter cross-correlation. The dependence of the implantation fluence, oxide layer thickness and annealing temperature on the cavity distribution was separately investigated. The ellipsometric fitted distributions were compared and cross-checked with analyses of transmission electron micrographs where the average surface cavity was determined sublayer by sublayer. The in-depth profiles were also compared with simulations of He and vacancy distributions.

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“…In theory, the implanted species damage the silicon substrate lattice, producing amorphous-Si like characteristics [6] and cause different refractive and absorption index compared to crystalline silicon substrate, therefore correlating to dose concentration. Furthermore, the damaged depth is a function of implant energy.…”

Section: Introductionmentioning

confidence: 99%

Fast and Accurate in-Line Monitor of Boron Implantation Energy and Dose by Spectroscopic Ellipsometry

Wen

Wang

et al. 2014

ECS Trans.

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Boron is a specified dopant applied at semiconductor manufacturing, which used for ultra-shallow junction (USJ) formation and stable SiGe stressed channel configuration at advanced generation. Aggressive device scaling over the last decade leads the precise implantation control much important and critical. In this paper, a non-destructive and fast technology for inline Boron implanted depth and dose concentration measurement was presented using Spectroscopic Ellipsometry (SE) methodology. Excellent correlation with SIMS reference result achieved. Further, the implanted processes quene time (Q-time) issue was also be considered for stable production monitor in foundry side. The metrology theory could extend to other doping species at medium and low energy application field.

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Spectroscopic Ellipsometry of Ion-Implantation-Induced Damage

Cited by 8 publications

References 62 publications

Modelling technique and analysis of porous anti-reflective coatings for reducing wide angle reflectance of thin-film solar cells

Modelling technique and analysis of porous anti-reflective coatings for reducing wide angle reflectance of thin-film solar cells

Characterization of in-depth cavity distribution after thermal annealing of helium-implanted silicon and gallium nitride

Fast and Accurate in-Line Monitor of Boron Implantation Energy and Dose by Spectroscopic Ellipsometry

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