The Influence of Cesium Implanted in Silicon on the Secondary Ion Emission

Frentrup, W.; Wiepentrog, M.; Müller‐Jahreis, U.

doi:10.1002/pssa.2210790259

Cited by 4 publications

(3 citation statements)

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“…On principle, it is already possible to derive from one curve the dependence of the enhancement effect on the alkali metal concentration. But, to minimize systematic errors only the maximum values were evaluated [9]. Therefore, different implantation doses were needed to establish the whole concentration dependence.…”

Section: Introduction and Experimentalmentioning

confidence: 99%

Negative Secondary Ion Emission Influenced by Alkali Atoms

Frentrup

Griepentrog

Müller‐Jahreis

1985

phys. stat. sol. (a)

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The influence of alkali metals on the negative secondary ion emission of the semiconductor materials Si, Ge, GaP, and GaAs is studied. For all materials the ion yield enhancement decreases exponentially with increasing ionization potential from Cs to Na. The enhancement effect depends linearly on the alkali volume concentration. The cluster emission can be approximately described by using the –neffective'' alkali concentration.

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Section: Introduction and Experimentalmentioning

confidence: 99%

Negative Secondary Ion Emission Influenced by Alkali Atoms

Frentrup

Griepentrog

Müller‐Jahreis

1985

phys. stat. sol. (a)

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“…The nieasiirenlents were performed with silicon secondary ions and cluster ions influenced by implanted Rb, K, and Na. Earlier measurements with Cs [9] were included. The alkali metals werc implanted at rooin temperature in silicon (lll), n-type, e = 10 Q cm in random direction a t energies from 60 keV (Na), and 100 keV (K) t o 200 keV (Rb), which yields projected ranges of about 120 nm in all cases.…”

Section: Introduction and Experimentalmentioning

confidence: 99%

“…The positive secondary ion eiiiission will not be discussed in the following, the reader may be referred to [9] for the case of cesium. To minimize systematic errors from the measured depth distributions only the niaxiniuni values were used for comparison.…”

Section: Introduction and Experimentalmentioning

confidence: 99%

The influence of alkali atoms implanted in silicon on the negative secondary ion emission

Frentrup

Griepertrog

Klose

et al. 1984

Phys. Stat. Sol. (a)

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The influence of alkali metal implantations in silicon on the negative secondary ion emission is studied. It is observed that the effect of negative ion signal enhancement decreases with increasing ionization potential from Cs to Na but depends lineary on the alkali volume concentration for all alkali metals. Natrium exhibits a somewhat deviating behaviour, which can be explained by its comparable high ionization potential.

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