The influence of alkali atoms implanted in silicon on the negative secondary ion emission

Abstract

The influence of alkali metal implantations in silicon on the negative secondary ion emission is studied. It is observed that the effect of negative ion signal enhancement decreases with increasing ionization potential from Cs to Na but depends lineary on the alkali volume concentration for all alkali metals. Natrium exhibits a somewhat deviating behaviour, which can be explained by its comparable high ionization potential.