Articles you may be interested inHigh breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors J. Vac. Sci. Technol. B 32, 051204 (2014); 10.1116/1.4891966GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
The temperature dependence of carrier recombination lifetime for n-and p-type Si wafers is measured by the photoconductivity decay method in a temperature range between room temperature and about 90 K. The carrier lifetime of as-polished wafers has very weak temperature dependence, while the carrier lifetime decreases steeply with decreasing temperature f or oxidized wafers. For all samples, a slow component appears in the photoconductivity decay curves after an initial fast decay at temperatures below 150 K. From a numerical simulation, we conclude that the decrease in the carrier lifetime with decreasing temperature is due to recombination through shallow recombination centers with an energy level within 0.15 eV from the bandedge, and that the slow component is due to minority carrier traps with a small majority carrier capture cross section.
Deep level electron traps in n-GaN grown by metal organic vapor phase epitaxy (MOVPE) on Si (111) substrate were studied by means of deep level transient spectroscopy (DLTS). The growth of n-GaN on different pair number of AlN/GaN superlattice buffer layers (SLS) system and on c-face sapphire substrate are compared. Three deep electron traps labeled E2 (the energy level is not clear), E4 (0.7-0.8 eV), E5 (1.0-1.1 eV), were observed in n-GaN on Si substrate. And the concentrations of these traps observed for n-GaN on Si are very different from that observed for n-GaN on sapphire substrate. E4 is the dominant of these levels for n-GaN on Si substrate, and it is not related to linear array defect like dislocation line, but it behaves like point-defect based on the analysis by electron capture kinetics, in spite of having high dislocation density to the order of 10 10 cm -2 .
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