Comparison of electrical properties in GaN grown on Si(111) and c-sapphire substrate by MOVPE

Characterisation of defects generated during constant current InGaN-on-silicon LED operation

“…Hence, it can be concluded that it is not a result of the device stressing. This trap property is similar to traps reported in GaN on SiC [18] as well as GaN [19] on Si, but not yet well understood [8]. Cross-sectional EELS shows a lower nitrogen concentration in the first quantum well of the stressed samples, as seen in figure 4.…”

Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate

“…The similar level at E C − 0.73 eV was revealed in GaN on SiC 9) and at E C − 0.67 eV in GaN on Si. 20) Two common levels in n-GaN grown sapphire: E C − 0.25 eV, and E C − 0.60 eV are absent in the n-GaN barrier layer of the LED. 12) Due to a much lower doping concentration of the p-GaN layer compared with the n-GaN layer, DLTS measurement is more sensitive in picking up traps in the p-GaN layer than in n-GaN layer.…”

Recent Progresses in GaN Power Rectifier

“…6) Among them, gallium nitride (GaN), with its wide band gap, high electrical critical field and high saturation velocity (even higher than for SiC) seems to be an excellent candidate for power devices with higher performances in terms of current density or reverse breakdown voltage. [7][8][9] Extensive efforts have been made to achieve high-quality GaN layer grown by heteroepitaxy on sapphire and silicon wafers, [10][11][12][13][14] leading to structures now compatible with rectifying devices at more reasonable cost. If an abundant literature can be found on both ohmic and rectifying contacts, [15][16][17][18][19][20][21][22][23][24][25] central parts of the Schottky devices, few papers present complete structures and their performances.…”