Temperature Dependence of Carrier Recombination Lifetime in Si Wafers

Ichimura, M.; Tajiri, H.; Ito, Tsuneo; Arai, Eisuke

doi:10.1149/1.1838796

Cited by 12 publications

(9 citation statements)

References 8 publications

(9 reference statements)

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“…The depletion length for a spherical geometry was estimated for surface potentials V S ϭ0.5 and 1.5 V using the same method as reported by Johnson and Halbout. 10 The calculation of generation rate was similar to the one determined by Ichimura et al 26 It is clear from Fig. 4 that generation currents are significantly dependent on the doping density.…”

Section: Resultssupporting

confidence: 61%

A reverse bias, tip-insulator-semiconductor tunnel diode model accounting for the delineation of a p/p+ junction using scanning tunneling microscopy

Lin

Jaccodine

Freund

2000

Journal of Applied Physics

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In this article, a tunneling-generation-avalanche model has been proposed to explain the reverse bias current–voltage behavior observed at a tip/air/p-type silicon junction. Based on this model, under conditions where the applied bias is more negative than the flat band voltage, the current will be dominated by generation processes, which has significant doping density dependence. Since mechanically cut tips, used in this work, can have complicated geometries, geometric effects, such as extended gates and concentration of the electrical field must be taken into account. By taking these factors into account, good agreement between theory and experiments can be achieved. Finally, in the presence of illumination, p/p+ junctions can be delineated successfully by taking advantage of the generation process. These results demonstrate that scanning tunneling microscopy can be used as a powerful tool for characterizing semiconductor devices.

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Section: Resultssupporting

confidence: 61%

A reverse bias, tip-insulator-semiconductor tunnel diode model accounting for the delineation of a p/p+ junction using scanning tunneling microscopy

Lin

Jaccodine

Freund

2000

Journal of Applied Physics

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“…As discussed in the main text, the bandwidth limit in the forward bias regime is set by the minority carrier lifetime in the ring waveguide, which does exhibit relatively low dependence with temperature. Our measurement results suggest that the carrier lifetime decreases slightly at low temperatures, which is explained by an increase in both radiative and Shockley-Read-Hall recombination 31,32 .…”

Section: Supplementary Informationmentioning

confidence: 68%

Readout of Superconducting Nanowire Single Photon Detectors through Forward Biased Optical Modulators

de Cea,

Wollman,

Atabaki

et al. 2020

Preprint

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Scalable, high speed data transfer between cryogenic (0.1-4K) and room temperature environments is instrumental in a broad range of fields including quantum computing, superconducting electronics, single photon imaging and space-based communications. A promising approach to overcome the limitations of conventional wire-based readout is the use of optical fiber communication. Optical fiber presents a 100-1,000x lower heat load than conventional electrical wiring, relaxing the requirements for thermal anchoring, and is also immune to electromagnetic interference, which allows routing of sensitive signals with improved robustness to noise and crosstalk. Most importantly, optical fibers allow for very high bandwidth densities (in the Tbps/mm 2 range) by carrying multiple signals through the same physical fiber (Wavelength Division Multiplexing, WDM). Here, we demonstrate for the first time optical readout of a superconducting nanowire single-photon detector (SNSPD) directly coupled to a CMOS photonic modulator, without the need for an interfacing device. By operating the modulator in the forward bias regime at a temperature of 3.6 K, we achieve very

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“…This fact is weakly countered by the minority carrier lifetime which typically decreases slightly with temperature. [7] Conclusion This study shows a positive effect of sunlight intensity and temperature on a photoelectrochemical cell for water splitting with hematite photoanode. The photocurrent increases linearly with sunlight without significant saturation effect.…”

Section: Effect Of Sunlight Intensitymentioning

confidence: 74%

Effect of Experimental Parameters on Water Splitting Using a Hematite Photoanode

Vorlet

Giordano

Chappuis

et al. 2015

Chimia

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Many studies designate hematite as a promising material for direct water splitting into hydrogen and oxygen. For a real outdoor application, it is important to consider hourly and seasonal conditions like temperature and sunlight intensity. The performance of an undoped hematite thin-film photoanode was tested in a photoelectrochemical cell under varying conditions of temperature and light intensity. Both parameters show a positive effect on performance under outdoor conditions.

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Temperature Dependence of Carrier Recombination Lifetime in Si Wafers

Cited by 12 publications

References 8 publications

A reverse bias, tip-insulator-semiconductor tunnel diode model accounting for the delineation of a p/p+ junction using scanning tunneling microscopy

A reverse bias, tip-insulator-semiconductor tunnel diode model accounting for the delineation of a p/p+ junction using scanning tunneling microscopy

Readout of Superconducting Nanowire Single Photon Detectors through Forward Biased Optical Modulators

Effect of Experimental Parameters on Water Splitting Using a Hematite Photoanode

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