Al N ∕ Al Ga N ∕ Ga N metal-insulator-semiconductor high-electron-mobility transistor on 4in. silicon substrate for high breakdown characteristics

Abstract

Articles you may be interested inHigh breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors J. Vac. Sci. Technol. B 32, 051204 (2014); 10.1116/1.4891966GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation

Comparison of electrical properties in GaN grown on Si(111) and c-sapphire substrate by MOVPE

“…[1,2]). Besides, an understanding of electrical properties in these materials is essential for improving material quality and device performance.…”

AlN/AlGaN/GaN MIS‐HEMTs with recessed source/drain Ohmic contact

“…As we have observed [2], the 2DEG channel is formed at a low depth (20 nm) for the AlN MIS-HEMTs which brings the channel close to the AlGaN/GaN interface. Increased scattering effects at the interface, gives a low mobility (1032 cm 2 /Vs) for MIS-HEMTs.…”

“…Trimethylgallium (TMG), TMA and NH 3 were used as sources for Ga, Al and N, respectively with Hydrogen used as a carrier gas. The crystalline quality of AlN was seen to strongly depend on the initial growth conditions such as NH 3 flow rate or TMA flow rate [4] A detailed device process and the characteristics of the MIS-HEMTs in comparison to HEMTs (without 2nm AlN) can be found in reference [2] as reported by us already. The fabricated MIS-HEMTs were observed to show less current collapse with reduced gate leakage accompanied by breakdown increase.…”

“…MOCVD grown AlN/AlGaN/GaN MIS-HEMTs were reported by us recently [2]. Though the presence of insulating 2 nm AlN enhances the 2DEG carrier density, the maximum drain current density is quite low (361 mA/mm).…”

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

“…7 To solve this problem, improving the surface/interface quality is an effective method to suppress the virtual gate effect and reduce the interface traps, and many works have been reported. [8][9][10][11] On one hand, virtual gate effect can be mitigated by inserting a dielectric and passivation layer to decrease injection current between gate electrode and AlGaN layer. Since the quality of passivation layer is of great importance on device performance and reliability, 12 silicon nitride deposited by low pressure chemical vapor deposition (LPCVD) is considered as an excellent candidate and shows great potential in (Al)GaN surface passivation and gate dielectric because of its high material quality (∼13.5 MV/cm) and plasma-free soft deposition, so it can achieve excellent device performance and reliability.…”