A taper dry etching technique for molybdenum films is proposed. The dry etching characteristics of oxygen-doped Mo films in a CC14-O~ discharge are studied. It is found that oxygen-doped Mo films are etched at a higher rate than oxygenundoped Mo film and that, in oxygen-doped Mo films, undercutting occurs differently from oxygen-undoped Mo film. Making use of the Mo etching characteristics, tapered Mo patterns with little ]inewidth loss to resist patterns are obtained by plasma etching of the Mo double layer, namely an oxygen-doped Mo film over an oxygen-undoped Mo film. The taper angle is varied from 40 ~ to 60 ~ by varying the thickness ratio of the oxygen-doped Mo film to the total Mo double layer. This technique promises to improve an interconnection yield in LSI's through reduction of wiring disconnection or shorts over the tapered-Mo steps.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 137.99.31.134 ABSTRACT An investigation of the CrO3-H~O-HF system shows that preferential etching of crystal defects on silicon surfaces is very sensitive to the concentration ratio of CrO3 to HF. This leads to development of a new etch consisting of one part by volume of 1.5 molal (M) CrO~ (150 g/1 H~O) and one part of 49% HF. This etch can delineate a wide variety of crystal defects with sharp definition. The shape of dislocation etch pits is uniquely determined by the orientation of wafer surfaces and dislocation lines.
The open tube vapor growth process of GaxIn1-xAs crystal in the Ga-In-Cl-H-As system is analyzed by a chemical equilibrium model, and the relation between growth condition and crystal composition is discussed. The theoretical analysis explained experimental results qualitatively.
We present a new optical polarimetric catalog for the Small Magellanic Cloud (SMC). It contains a total of 7207 stars, located in the northeast (NE) and Wing sections of the SMC and part of the Magellanic Bridge. This new catalog is a significant improvement compared to previous polarimetric catalogs for the SMC. We used it to study the sky-projected interstellar magnetic field structure of the SMC. Three trends were observed for the ordered magnetic field direction at position angles (PAs) of (65°± 10°), (115°± 10°), and (150°± 10°). Our results suggest the existence of an ordered magnetic field aligned with the Magellanic Bridge direction and SMC's Bar in the NE region, which have PAs roughly at 115 • . 4 and 45°, respectively. However, the overall magnetic field structure is fairly complex. The trends at 115°and 150°may be correlated with the SMC's bimodal structure, observed in Cepheids' distances and HI velocities. We derived a value of B (0.947 0.079) sky = ± μG for the ordered sky-projected magnetic field, and B (1.465 0.069) δ = ± μG for the turbulent magnetic field. This estimate of B sky is significantly larger (by a factor of ∼10) than the line of sight field derived from Faraday rotation observations, suggesting that most of the ordered field component is on the plane of the sky. A turbulent magnetic field stronger than the ordered field agrees with observed estimates for other irregular and spiral galaxies. For the SMC the B B sky δ ratio is closer to what is observed for our Galaxy than other irregular dwarf galaxies.
A new method for fabricating ultrafine grooves with a high depth to width ratio is proposed. The main feature of this method is to use V-shaped SiO2 grooves as etching masks. These grooves are prepared by depositing a SiO2 film onto the patterned substrate employing electron cyclotron resonance (ECR) plasma deposition, followed by removing the sidewall deposited ECR-SiO2 films with buffered HF solution. The gap width formed at the bottom of the V grooves were controlled by varying the HF etching time. Fine grooves having 0.2 μm or narrower widths were successfully fabricated into Si substrates and Ta films. Suppressing the localized undercutting is vital for fabrication of nanometer scale structures.
A new self-scanned image sensor using a PCD as a scanner is proposed. A 64 bit (MOS type) and a 128 bit (bipolar type) linear photosensor arrays with the PCD scanner were designed and fabricated successfully. The PCD scanner can be operated by such a low clock pulse voltage as 1 to 5 V. Accordingly, a S/N ratio is high because the clock noise from the clock pulse is low. A S/N ratio of more than 35 dB were experimentally obtained without any signal processing. Moreover, the new device proposed here has the advantage of a simple structure and the device with high bit numbers is expected.
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