1988
DOI: 10.1116/1.584064
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A new ultrafine groove fabrication method utilizing electron cyclotron resonance plasma deposition and reactive ion etching

Abstract: A new method for fabricating ultrafine grooves with a high depth to width ratio is proposed. The main feature of this method is to use V-shaped SiO2 grooves as etching masks. These grooves are prepared by depositing a SiO2 film onto the patterned substrate employing electron cyclotron resonance (ECR) plasma deposition, followed by removing the sidewall deposited ECR-SiO2 films with buffered HF solution. The gap width formed at the bottom of the V grooves were controlled by varying the HF etching time. Fine gro… Show more

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“…In addition, these plasmas may be used for deposition of SiO SiN,, and SiC (Ohki et al, 1988). Initially, they were used in ion …”
Section: Microwave Electron Cyclotron Resonance Plasmasmentioning
confidence: 99%
“…In addition, these plasmas may be used for deposition of SiO SiN,, and SiC (Ohki et al, 1988). Initially, they were used in ion …”
Section: Microwave Electron Cyclotron Resonance Plasmasmentioning
confidence: 99%