We observed an ambipolar behavior in multiwalled carbon nanotubes in a backgate configuration, which allowed us to perform systematic inspection of the low-temperature transport properties against gate voltage. The results revealed that a power-law temperature-dependent conductance, which is a sign of an unconventional metallic state, disappears when a high gate voltage is applied, and conductance becomes temperature independent, indicating a normal Fermi liquid state. This demonstrates a field effect tuning of electronic states in nanoscaled materials.
This paper reports on a new bottom-up technique of forming silicon nanostructures based on natural aggregation of nanocrystalline (nc) -Si dots in the solution. We first study how the nc-Si dots deposited on the Si substrate get mobile in the solution by simply dipping the substrate with the nc-Si dots on into various solutions. We then demonstrate a solution droplet evaporation method that utilizes aggregation of the dots when we evaporate a solution droplet applied onto the nc-Si dots randomly deposited on the Si substrate. It is shown that the nc-Si dots are assembled well in a droplet of the hydrofluoric acid solution, resulting in various regular patterns on the substrate.
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